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Received: 1999-10-12
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AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER
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HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin. AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER[J]. Journal of Zhejiang University Science A, 2000, 1(4): 427-430.
@article{title="AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER",
author="HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, ZHAO Bing-hui, WANG Lei, QUE Duan-lin",
journal="Journal of Zhejiang University Science A",
volume="1",
number="4",
pages="427-430",
year="2000",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2000.0427"
}
%0 Journal Article
%T AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER
%A HUANG Jing-yun
%A YE Zhi-zhen
%A LU Huan-ming
%A ZHAO Bing-hui
%A WANG Lei
%A QUE Duan-lin
%J Journal of Zhejiang University SCIENCE A
%V 1
%N 4
%P 427-430
%@ 1869-1951
%D 2000
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2000.0427
TY - JOUR
T1 - AN ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEM AND Si, GeSi EPITAXY ON A THREE-INCH Si WAFER
A1 - HUANG Jing-yun
A1 - YE Zhi-zhen
A1 - LU Huan-ming
A1 - ZHAO Bing-hui
A1 - WANG Lei
A1 - QUE Duan-lin
J0 - Journal of Zhejiang University Science A
VL - 1
IS - 4
SP - 427
EP - 430
%@ 1869-1951
Y1 - 2000
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2000.0427
Abstract: An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was introduced. The Si epilayers and SiGe strained-layers on three-inch Si (100) substrates were grown in this UHV/CVD system. The substrate temperature during growth was from 550°C to 780°C. The properties of epilayers were characterized by high-resolution cross-sectional transmission electron microscopy (TEM), double crystal X-ray diffraction (DCXRD), and spreading resistance (SPR). A B-doped SiGe epilayer with uniform resistivity distribution was grown.
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