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Journal of Zhejiang University SCIENCE A 2009 Vol.10 No.7 P.1060-1066

http://doi.org/10.1631/jzus.A0820545


Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process


Author(s):  Xiao-yang DU, Shu-rong DONG, Yan HAN, Ming-xu HUO, Da-hai HUANG

Affiliation(s):  ESD Lab, Department of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   dongshurong@zju.edu.cn

Key Words:  Electrostatic discharge (ESD) protection, Diode-triggered silicon controlled rectifier (DTSCR), Leakage current


Xiao-yang DU, Shu-rong DONG, Yan HAN, Ming-xu HUO, Da-hai HUANG. Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process[J]. Journal of Zhejiang University Science A, 2009, 10(7): 1060-1066.

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author="Xiao-yang DU, Shu-rong DONG, Yan HAN, Ming-xu HUO, Da-hai HUANG",
journal="Journal of Zhejiang University Science A",
volume="10",
number="7",
pages="1060-1066",
year="2009",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.A0820545"
}

%0 Journal Article
%T Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process
%A Xiao-yang DU
%A Shu-rong DONG
%A Yan HAN
%A Ming-xu HUO
%A Da-hai HUANG
%J Journal of Zhejiang University SCIENCE A
%V 10
%N 7
%P 1060-1066
%@ 1673-565X
%D 2009
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A0820545

TY - JOUR
T1 - Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process
A1 - Xiao-yang DU
A1 - Shu-rong DONG
A1 - Yan HAN
A1 - Ming-xu HUO
A1 - Da-hai HUANG
J0 - Journal of Zhejiang University Science A
VL - 10
IS - 7
SP - 1060
EP - 1066
%@ 1673-565X
Y1 - 2009
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.A0820545


Abstract: 
A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) protection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Compared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

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