CLC number: TN43
On-line Access: 2023-05-06
Received: 2022-03-01
Revision Accepted: 2022-09-13
Crosschecked: 2023-05-06
Cited: 0
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Citations: Bibtex RefMan EndNote GB/T7714
Ayoub SADEGHI, Razieh GHASEMI, Hossein GHASEMIAN, Nabiollah SHIRI. Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits[J]. Frontiers of Information Technology & Electronic Engineering,in press.https://doi.org/10.1631/FITEE.2200077 @article{title="Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits", %0 Journal Article TY - JOUR
基于特定最低有效位动态阈值碳纳米管场效应晶体管的高效优化近似栅极扩散输入全加器1伊斯兰阿扎德大学设拉子分校电气工程系,伊朗设拉子,7198774731 2伊朗科技大学电气工程学院,伊朗德黑兰,1684613114 3设拉子技术大学电气与电子工程系,伊朗设拉子,7155713876 摘要:碳纳米管场效应晶体管(CNTFET)可替代传统晶体管,尤其在基于近似计算的容错数字电路中。本文结合CNTFET技术和栅极扩散输入(GDI)技术,提出3种分别具有6、6和8个晶体管的基于近似计算的全加器。采用基于非支配排序的遗传算法II,将管数和手性向量作为变量,对所提单元进行性能寻优。结果表明,在电路面积有所增加的情况下,功耗延时积性能指标提升约50%。采用蒙特卡罗方法(MCM)和32 nm CNTFET技术,评估所提电路在制造过程中的工艺偏差和稳定性。与文献中的方法相比,所提电路具有更高稳定性。在电路晶体管中使用的动态阈值技术修正了可能出现的输出压降。所提电路出色的电路性能和差错率使其可以作为复杂算术电路(如乘法器)的最低有效位(LSB)部分。 关键词组: Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article
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