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Journal of Zhejiang University SCIENCE A
ISSN 1673-565X(Print), 1862-1775(Online), Monthly
2017 Vol.18 No.1 P.67-74
Design and fabrication of an surface acoustic wave resonator based on AlN/4H-SiC material for harsh environments
Abstract: Surface acoustic wave (SAW) sensors and micro-electromechanical system (MEMS) technology provide a promising solution for measurement in harsh environments such as gas turbines. In this paper, a SAW resonator (size: 1107 µm× 721 µm) based on the AlN/4H-SiC multilayer structure is designed and simulated. A MEMS-compatible fabrication process is employed to fabricate the resonator. The results show that highly c-axis-oriented AlN thin films deposited on the 4H-SiC substrate are obtained, with that the diffraction peak of AlN is 36.10° and the lowest full width at half maximum (FWHM) value is only 1.19°. The test results of the network analyzer are consistent with the simulation curve, which is very encouraging and indicates that our work is a significant attempt to solve the measurement problems mainly including high temperature stability of sensitive structures and the heat transmission of leads in harsh environments. It is essential to get the best performance of SAW resonator, optimize and characterize the behaviors in high temperatures in future research.
Key words: Surface acoustic wave (SAW) resonator, AlN/4H-SiC, Harsh environment, Micro-electromechanical system (MEMS) technology, Gas turbine
创新点：1. 首次在耐高温材料AlN/4H-SiC上设计、仿真及制作SAW谐振器并测试电学性能；2. 在4H-SiC上得到了高质量c轴择优取向的AlN压电薄膜并开发了一套与MEMS工艺兼容的SAW谐振器制作工艺。
方法：1. 通过对SAW谐振器所有结构参数的设计与仿真，得到谐振器的谐振频率与反谐振频率等（图2和3）；2. 利用磁控溅射方法在4H-SiC衬底上溅射高质量c轴择优取向的AlN压电薄膜，再利用光刻、湿法腐蚀等MEMS工艺制作SAW谐振器（图4）；3. 通过扫描电镜和X射线衍射等手段，检测AlN压电薄膜质量（图5和6）及器件制作结果（图7）；4. 利用网络分析仪测试SAW谐振器电学性能并与仿真结果相比较，验证SAW谐振器设计仿真方法和MEMS制作工艺的可行性和有效性（图8）。
结论：1. 基于耐高温材料AlN/4H-SiC，成功设计并制作出SAW谐振器（尺寸：1107 μm×721 μm）；2. 在4H-SiC上得到了高质量c轴择优取向的AlN压电薄膜，衍射峰为36.10°，摇摆曲线半高宽仅1.19°；3. SAW谐振器电学性能测试结果与仿真结果一致，证明其设计仿真方法正确有效、MEMS制作工艺可行。
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DOI:
10.1631/jzus.A1600028
CLC number:
TH703.2
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On-line Access:
2017-01-03
Received:
2016-01-21
Revision Accepted:
2016-05-13
Crosschecked:
2016-12-12