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Frontiers of Information Technology & Electronic Engineering
ISSN 2095-9184 (print), ISSN 2095-9230 (online)
2017 Vol.18 No.8 P.1180-1185
Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs
Abstract: A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etching-selectivity ratio of InGaAs to InAlAs material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide (H2O2). Selective wet-etching is validated in the gate-recess process of InAlAs/InGaAs InP-based HEMTs, which proceeds and automatically stops at the InAlAs barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAlAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAlAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic transconductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.
Key words: High electron mobility transistors (HEMTs); Gate-recess; Digital wet-etching; Selective wet-etching
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DOI:
10.1631/FITEE.1601121
CLC number:
TN385
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On-line Access:
2017-09-08
Received:
2016-02-25
Revision Accepted:
2016-07-10
Crosschecked:
2017-08-06