Abstract: We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO₂) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO₂ (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO₂ active layer. Experimental results show that the ZrO₂ active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO₂ QDs. The conductive mechanism of the Ag/ZrO₂/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

Key words: Zirconia quantum dot, Resistive switching, Memory device, Spin coating

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