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Frontiers of Information Technology & Electronic Engineering

ISSN 2095-9184 (print), ISSN 2095-9230 (online)

2022 Vol.23 No.11 P.1579-1601

Synaptic devices based on semiconductor nanocrystals

Mingxuan BU, Yue WANG, Lei YIN, Zhouyu TONG, Yiqiang ZHANG, Deren YANG, Xiaodong PI

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China; Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China; Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China

xdpi@zju.edu.cn

Abstract: To meet a growing demand for information processing, brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device, synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices, semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review, we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally, we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.

Key words: Semiconductor nanocrystal; Synaptic devices; Neuromorphic computing

Chinese Summary  <23> 基于半导体纳米晶体的神经突触器件

步明轩1,2，王越1,2，尹蕾1,2，童周禹1,2，张懿强3，杨德仁1,2,4,5，皮孝东1,2,4,5
1浙江大学硅材料国家重点实验室，中国杭州市，310027
2浙江大学材料科学与工程学院，中国杭州市，310027
3郑州大学材料科学与工程学院，中国郑州市，450001
4浙江大学杭州国际科创中心先进半导体研究院，中国杭州市，311200
5浙江大学杭州国际科创中心浙江省宽禁带功率半导体材料与器件重点实验室，中国杭州市，311200
摘要：近年来，人们对信息处理的需求日益增长，脑启发式神经形态器件得到了广泛的关注。突触器件作为一类重要的神经形态器件，在短短几年内迅速升温。在用于制备突触器件的各种材料中，半导体纳米晶体（NCs）因其优异的电学和光学性能而成为首选材料之一。本综述论文首先介绍了基于半导体纳米晶体的突触器件的研究背景及半导体纳米晶体的基本性质。然后，根据器件有源层所用纳米晶体种类的不同，分类介绍了基于纳米晶体的突触器件的最新研究进展。最后，讨论了基于半导体纳米晶体的突触器件目前仍面临的问题和挑战。

关键词组：半导体纳米晶体；突触器件；神经形态计算


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DOI:

10.1631/FITEE.2100551

CLC number:

Q811; TN303

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On-line Access:

2022-10-26

Received:

2021-11-29

Revision Accepted:

2022-04-24

Crosschecked:

2022-10-26

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