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Frontiers of Information Technology & Electronic Engineering
ISSN 2095-9184 (print), ISSN 2095-9230 (online)
2024 Vol.25 No.2 P.308-315
A novel topology with controllablewideband baseband impedance for power amplifiers
Abstract: This paper presents a novel topology to control the baseband impedance of a power amplifier (PA) to avoid performance deterioration in concurrent dual-band mode. This topology can avoid pure resonance of capacitors and inductors LC, which leads to a high impedance at some frequency points. Consequently, it can be applied to transmitters that are excited by broadband signals. In particular, by adjusting the circuit parameters and increasing stages, the impedance of the key frequency bands can be flexibly controlled. A PA is designed to support this design idea. Its saturated output power is around 46.7 dBm, and the drain efficiency is >68.2% (1.8–2.3 GHz). Under concurrent two-tone excitation, the drain efficiency reaches around 40% even under 5.5 dB back-off power with the tone spacing from 10 MHz to 500 MHz. These results demonstrate that the proposed topology is capable of controlling wideband baseband impedance.
Key words: Baseband impedance; Concurrent dual-band; Power amplifier
1重庆科技大学智能技术与工程学院，中国重庆市，400065
2重庆大学微电子与通信工程学院，中国重庆市，400065
摘要：本文提出一种新的拓扑结构控制功率放大器（PA）的基带阻抗，以避免在并发双频带模式下性能下降。传统基带阻抗控制通过纯LC网络实现，但局部频点发生谐振后会呈现高阻抗，不能实现连续宽频带基带阻抗控制。本文所提出的结构可以有效避免这一问题，该拓扑结构可以应用于具有宽带信号激励的发射机架构。特别地，通过调整电路参数和增加电路的阶数，可以灵活控制关键频带的阻抗。为证实这一设计思想，设计了一个功率放大器：其饱和输出功率约为46.7 dBm，漏极效率超过68.2%（1.8–2.3 GHz）。在同时双音激励下，即使在5.5 dB的回退功率下，两个频点间距从10至500 MHz，漏极效率也达到40%左右。这些结果表明，所提出的拓扑结构能有效控制宽带的基带阻抗。
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DOI:
10.1631/FITEE.2300074
CLC number:
TN722
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On-line Access:
2024-08-27
Received:
2023-10-17
Revision Accepted:
2024-05-08
Crosschecked:
2023-05-17