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Frontiers of Information Technology & Electronic Engineering
ISSN 2095-9184 (print), ISSN 2095-9230 (online)
2024 Vol.25 No.10 P.1390-1405
Research on electromagnetic interference resistance performance of three kinds of CMOS inverters
Abstract: The performance of complementary metal oxide semiconductor (CMOS) circuits is affected by electromagnetic interference (EMI), and the study of the circuit’s ability to resist EMI will facilitate the design of circuits with better performance. Current-mode CMOS circuits have been continuously developed in recent years due to their advantages of high speed and low power consumption over conventional circuits under the deep submicron process; their EMI resistance performance deserves further study. This paper introduces three kinds of NOT gate circuits: conventional voltage-mode CMOS, MOS current-mode logic (MCML) with voltage signal of input and output, and current-mode CMOS with current signal of input and output. The effects of EMI on three NOT gate circuits are investigated using Cadence Virtuoso software simulation, and a disturbance level factor is defined to compare the effects of different interference terminals, interference signals’ waveforms, and interference signals’ frequencies on the circuits in the 65 nm process. The relationship between input resistance and circuit EMI resistance performance is investigated by varying the value of cascade resistance at the input of the current-mode CMOS circuits. Simulation results show that the current-mode CMOS circuits have better resistance performance to EMI at high operating frequencies, and the higher the operating frequency of the current-mode CMOS circuits, the better the resistance performance of the circuits to EMI. Additionally, the effects of different temperatures and different processes on the resistance performance of three circuits are also studied. In the temperature range of -40 °C to 125 °C, the higher the temperature, the weaker the resistance ability of voltage-mode CMOS and MCML circuits, and the stronger the resistance ability of current-mode CMOS circuits. In the 28 nm process, the current-mode CMOS circuit interference resistance ability is relatively stronger than that of the other two kinds of circuits. The relative interference resistance ability of voltage-mode CMOS and MCML circuits in the 28 nm process is similar to that of the 65 nm process, while the relative interference resistance ability of current-mode CMOS circuits in the 28 nm process is stronger than that of the 65 nm process. This study provides a basis for the design of current-mode CMOS circuits against EMI.
Key words: Voltage-mode complementary metal oxide semiconductor (CMOS); MOS current-mode logic (MCML); Current-mode CMOS; Electromagnetic interference (EMI); Inverter
浙江大学信息与电子工程学院,中国杭州市,310027
摘要:电磁干扰会影响CMOS电路工作性能,研究电路抗信号干扰能力将有利于设计性能更优的电路。电流型CMOS电路因在深亚微米工艺下相较于传统电路有高速度、低功耗等优势,近些年得到不断发展,其抗干扰能力值得进一步研究。文中介绍传统电压型CMOS、MOS电流型逻辑电路(MOS Current-Mode Logic,MCML)、电流型CMOS三种结构的非门电路。通过Cadence Virtuoso软件仿真模拟电磁干扰对三种非门电路的影响,并定义一个受干扰程度因子,用来研究比较不同干扰点、不同干扰波形、不同干扰频率在65纳米工艺下对电路的影响。并通过改变电流型CMOS电路输入端串联电阻值,研究干扰信号电阻与电路抗干扰性的关系。仿真结果表明:在高工作频率下,电流型CMOS电路具有更好的抗干扰性,且电流型CMOS电路工作频率越高,电路抗干扰性越强。此外,还研究了不同温度和不同工艺对三种电路抗干扰性能的影响。在-40 °C至125 °C温度范围内,温度越高,电压型CMOS和MCML型电路抗干扰能力越弱,电流型CMOS电路抗干扰能力越强。28纳米工艺下,电流型CMOS电路比其他两种电路的相对抗干扰能力更强;28纳米工艺下电压型CMOS和MCML电路的相对抗干扰能力与65纳米工艺下的相对抗干扰能力相似,而28纳米工艺下电流型CMOS电路的相对抗干扰能力比65纳米工艺下的相对抗干扰能力强。论文工作为设计抗电磁干扰的电流型CMOS电路提供依据。
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DOI:
10.1631/FITEE.2400264
CLC number:
TN95
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On-line Access:
2024-11-08
Received:
2024-04-08
Revision Accepted:
2024-06-03
Crosschecked:
2024-11-08