Abstract: Manganese oxide La_0.7Sr_0.3MnO₃ produced on (001) LaAlO₃ substrate by means of sol-gel spin-coating method was used as the base electrode of LaSrMnO/Al₂O₃/Fe tunnel junctions. The I-V characteristic in the high bias region of this system was shown to be similar to that of the conventional tunnel junctions. Anomalous temperature dependence of tunneling resistance was observed to be a positive temperature coefficient of resistance. This phenomenon was attributed to the high voltage applied and was simply elucidated from the density states vs. energy diagram.

Key words: tunnel junctions, manganese oxide, transport properties

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