Abstract: Homogeneous, crack-free SrNb_xTi_1−xO₃ thin films on (110) silicon substrates were successfully fabricated by sol-gel processing. The optimum route and conditions were systematically investigated. Sr(OAc)₂ glacial acetic acid solution, after being refluxed and reacted with tartrate, formed Sr(OAc)₂(C₄H₆O₆)₂; Ti(OBu)₄ formed Ti(OAc)_4−x(AcAc)_x after having the ligand partially exchanged with AcAc, while Nb(OC₂H₅)₅ formed (OAc)₂Nb(AcAc) (C₄H₆O₆) by exchanging of ligand in glacial acetic acid with (CH₃CO)₂O. All the metal species after undergoing partial hydrolysis and polymerization with hydroxyl or oxygen, formed SrNb_xTi_1−xO₃ cluster sol. Methyl cellulose (MCL) caused SrNb_xTi_1−xO₃ sol to have polymeric structure and easily form films. SrNb_xTi_1−xO₃ films with perovskite were subsequently formed after being annealed at 650~750 °C for 60 min in 25% N₂+75% H₂ (volume ratio) atmosphere. Resistivity of the SrNb_0.1Ti_0.9O₃ films at room temperature was 64 μΩ∙cm, a particular T² temperature dependence of the resistivity, from 25 K up to room temperature, was observed.

Key words: SrNb_xTi_1−xO₃ (SNTO) film, Sol-gel technique, Donor-doping-semiconductor

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