Abstract: The micro-Raman method is a non-contact and non-destructive method for thermal conductivity measurement. To reduce the measurement error induced by the poor fit of the basic equation of the original micro-Raman method, we developed a new basic equation for the heat source of a Gaussian laser beam. Based on the new basic equation, an analytical heat transfer model has been built to extend the original micro-Raman method to thin films with submicrometer- or nanometer-scale thickness. Experiments were performed to measure the thermal conductivity of dielectric thin films with submicrometer- or nanometer-scale thickness. The thermal resistance of the interface between dielectric thin films and their silicon substrate was also obtained. The obtained thermal conductivity of silicon dioxide film is 1.23 W/(m·K), and the interface thermal resistance between silicon dioxide film and substrate is 2.35×10⁻⁸ m²·K/W. The thermal conductivity and interface thermal resistance of silicon nitride film are 1.07 W/(m·K) and 3.69×10⁻⁸ m²·K/W, respectively. The experimental results are consistent with reported data.

Key words: Thermal conductivity, Dielectric thin films, Submicrometer- or nanometer-scale, Porous silicon, Thermal effect micro-systems (TEMS)

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