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Journal of Zhejiang University SCIENCE C
ISSN 1869-1951(Print), 1869-196x(Online), Monthly
2012 Vol.13 No.12 P.937-943
A low drift current reference based on PMOS temperature correction technology
Abstract: A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10−6/°C over the temperature range of −40–120 °C under the typical condition.
Key words: Current reference, Cross structure, PMOS cascode, Temperature coefficient, Low drift
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DOI:
10.1631/jzus.C1200112
CLC number:
TN432
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2024-08-27
Received:
2023-10-17
Revision Accepted:
2024-05-08
Crosschecked:
2012-10-22