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CLC number: TN303
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2015-11-06
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A driving pulse edge modulation technique and its complex programming logic devices implementation
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Xiao Chen, Dong-chang Qu, Yong Guo, Guo-zhu Chen. A driving pulse edge modulation technique and its complex programming logic devices implementation[J]. Frontiers of Information Technology & Electronic Engineering, 2015, 16(12): 1088-1098.
@article{title="A driving pulse edge modulation technique and its complex programming logic devices implementation",
author="Xiao Chen, Dong-chang Qu, Yong Guo, Guo-zhu Chen",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="16",
number="12",
pages="1088-1098",
year="2015",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.1500111"
}
%0 Journal Article
%T A driving pulse edge modulation technique and its complex programming logic devices implementation
%A Xiao Chen
%A Dong-chang Qu
%A Yong Guo
%A Guo-zhu Chen
%J Frontiers of Information Technology & Electronic Engineering
%V 16
%N 12
%P 1088-1098
%@ 2095-9184
%D 2015
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1500111
TY - JOUR
T1 - A driving pulse edge modulation technique and its complex programming logic devices implementation
A1 - Xiao Chen
A1 - Dong-chang Qu
A1 - Yong Guo
A1 - Guo-zhu Chen
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 16
IS - 12
SP - 1088
EP - 1098
%@ 2095-9184
Y1 - 2015
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1500111
Abstract: With the continual increase in switching speed and rating of power semiconductors, the switching voltage spike becomes a serious problem. This paper describes a new technique of driving pulse edge modulation for insulated gate bipolar transistors (IGBTs). By modulating the density and width of the pulse trains, without regulating the hardware circuit, the slope of the gate driving voltage is controlled to change the switching speed. This technique is used in the driving circuit based on complex programmable logic devices (CPLDs), and the switching voltage spike of IGBTs can be restrained through software, which is easier and more flexible to adjust. Experimental results demonstrate the effectiveness and practicability of the proposed method.
This paper is well written and interesting. A new digital driving control method is proposed by the authors to control the switching speed and its associated voltage spike issue.
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