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Abstract: We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod.

The carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod has been investigated theoretically and numerically in present contribution. A theoretical solution has been given based on a one-dimensional model. Meanwhile, the carrier distribution and electromechanical fields are simulated qualitatively and quantitatively.I believe this is the first piece of theoretical work on the effect of carrier distribution in piezoelectric semiconductor rods.

压电半导体杆中的机械场、电场与载流子分布研究

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