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Received: 2020-07-08

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Crosschecked: 2021-09-02

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Fabi Zhang


Zujun Qin


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Frontiers of Information Technology & Electronic Engineering  2021 Vol.22 No.10 P.1370-1378


Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering

Author(s):  Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin

Affiliation(s):  Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; more

Corresponding email(s):   zhangfabi@outlook.com, qinzj@guet.edu.cn

Key Words:  (GaxIn1−x)2O3 films, Band-gap tunable, Magnetron sputtering

Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin. Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering[J]. Frontiers of Information Technology & Electronic Engineering, 2021, 22(10): 1370-1378.

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author="Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin",
journal="Frontiers of Information Technology & Electronic Engineering",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering
%A Fabi Zhang
%A Jinyu Sun
%A Haiou Li
%A Juan Zhou
%A Rong Wang
%A Tangyou Sun
%A Tao Fu
%A Gongli Xiao
%A Qi Li
%A Xingpeng Liu
%A Xiuyun Zhang
%A Daoyou Guo
%A Xianghu Wang
%A Zujun Qin
%J Frontiers of Information Technology & Electronic Engineering
%V 22
%N 10
%P 1370-1378
%@ 2095-9184
%D 2021
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2000330

T1 - Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering
A1 - Fabi Zhang
A1 - Jinyu Sun
A1 - Haiou Li
A1 - Juan Zhou
A1 - Rong Wang
A1 - Tangyou Sun
A1 - Tao Fu
A1 - Gongli Xiao
A1 - Qi Li
A1 - Xingpeng Liu
A1 - Xiuyun Zhang
A1 - Daoyou Guo
A1 - Xianghu Wang
A1 - Zujun Qin
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 22
IS - 10
SP - 1370
EP - 1378
%@ 2095-9184
Y1 - 2021
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2000330

Multicomponent oxide (GaxIn1−x)2O3 films are prepared on (0001) sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing. The optical properties and band structure evolution over the whole range of compositions in ternary compounds (GaxIn1−x)2O3 are investigated in detail. The X-ray diffraction spectra clearly indicate that (GaxIn1−x)2O3 films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures, and that for films with Ga content higher than 0.74, only the monoclinic structure appears. The transmittance of all films is greater than 86% in the visible range with sharp absorption edges and clear fringes. In addition, a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content, indicating increasing band-gap energy from 3.61 to 4.64 eV. The experimental results lay a foundation for the application of transparent conductive compound (GaxIn1−x)2O3 thin films in photoelectric and photovoltaic industry, especially in display, light-emitting diode, and solar cell applications.


摘要:采用磁控溅射技术和热退火技术在(0001)蓝宝石衬底上制备了多组分氧化物(GaxIn1−x)2O3薄膜,实现可调带隙。详细研究了三元化合物(GaxIn1−x)2O3在整个组成范围内的光学性质和能带结构演化。X射线衍射谱表明,Ga含量在0.11至0.55之间的(GaxIn1−x)2O3薄膜既有立方结构,也有单斜结构,而Ga含量高于0.74的(GaxIn1?x)2O3薄膜只有单斜结构。在可见光范围,所有薄膜透光率均高于86%,吸收边清晰,条纹清晰。此外,随着Ga含量增加,紫外吸收边出现380至250 nm的蓝移,表明禁带能从3.61 eV增加至4.64 eV。实验结果为透明导电化合物半导体(GaxIn1−x)2O3薄膜在光电和光伏行业的应用,特别是在显示器、发光二极管和太阳能电池的应用奠定了基础。


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