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On-line Access: 2021-10-08

Received: 2020-07-08

Revision Accepted: 2020-11-11

Crosschecked: 2021-09-02

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Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Fabi Zhang

https://orcid.org/0000-0002-4896-6854

Zujun Qin

https://orcid.org/0000-0001-9775-6119

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Frontiers of Information Technology & Electronic Engineering  2021 Vol.22 No.10 P.1370-1378

http://doi.org/10.1631/FITEE.2000330


Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering


Author(s):  Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin

Affiliation(s):  Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; more

Corresponding email(s):   zhangfabi@outlook.com, qinzj@guet.edu.cn

Key Words:  (GaxIn1−x)2O3 films, Band-gap tunable, Magnetron sputtering


Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin. Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering[J]. Frontiers of Information Technology & Electronic Engineering, 2021, 22(10): 1370-1378.

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author="Fabi Zhang, Jinyu Sun, Haiou Li, Juan Zhou, Rong Wang, Tangyou Sun, Tao Fu, Gongli Xiao, Qi Li, Xingpeng Liu, Xiuyun Zhang, Daoyou Guo, Xianghu Wang, Zujun Qin",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="22",
number="10",
pages="1370-1378",
year="2021",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2000330"
}

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%T Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering
%A Fabi Zhang
%A Jinyu Sun
%A Haiou Li
%A Juan Zhou
%A Rong Wang
%A Tangyou Sun
%A Tao Fu
%A Gongli Xiao
%A Qi Li
%A Xingpeng Liu
%A Xiuyun Zhang
%A Daoyou Guo
%A Xianghu Wang
%A Zujun Qin
%J Frontiers of Information Technology & Electronic Engineering
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%@ 2095-9184
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%I Zhejiang University Press & Springer
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A1 - Rong Wang
A1 - Tangyou Sun
A1 - Tao Fu
A1 - Gongli Xiao
A1 - Qi Li
A1 - Xingpeng Liu
A1 - Xiuyun Zhang
A1 - Daoyou Guo
A1 - Xianghu Wang
A1 - Zujun Qin
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DOI - 10.1631/FITEE.2000330


Abstract: 
Multicomponent oxide (GaxIn1−x)2O3 films are prepared on (0001) sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing. The optical properties and band structure evolution over the whole range of compositions in ternary compounds (GaxIn1−x)2O3 are investigated in detail. The X-ray diffraction spectra clearly indicate that (GaxIn1−x)2O3 films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures, and that for films with Ga content higher than 0.74, only the monoclinic structure appears. The transmittance of all films is greater than 86% in the visible range with sharp absorption edges and clear fringes. In addition, a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content, indicating increasing band-gap energy from 3.61 to 4.64 eV. The experimental results lay a foundation for the application of transparent conductive compound (GaxIn1−x)2O3 thin films in photoelectric and photovoltaic industry, especially in display, light-emitting diode, and solar cell applications.

磁控溅射法生长的带隙可调谐(GaxIn1−x)2O3

张法碧1,孙巾寓1,李海鸥1,周娟1,王荣1,孙堂友1,傅涛1,肖功利1,李琦1,刘兴鹏1,张秀云1,郭道友2,王相虎3,秦祖军1
1桂林电子科技大学广西精密导航技术与应用重点实验室,中国桂林市,541004
2浙江理工大学光电材料与器件中心,浙江省光场调控技术重点实验室,中国杭州市,310018
3上海电机大学机械工程学院,中国上海市,200245
摘要:采用磁控溅射技术和热退火技术在(0001)蓝宝石衬底上制备了多组分氧化物(GaxIn1−x)2O3薄膜,实现可调带隙。详细研究了三元化合物(GaxIn1−x)2O3在整个组成范围内的光学性质和能带结构演化。X射线衍射谱表明,Ga含量在0.11至0.55之间的(GaxIn1−x)2O3薄膜既有立方结构,也有单斜结构,而Ga含量高于0.74的(GaxIn1?x)2O3薄膜只有单斜结构。在可见光范围,所有薄膜透光率均高于86%,吸收边清晰,条纹清晰。此外,随着Ga含量增加,紫外吸收边出现380至250 nm的蓝移,表明禁带能从3.61 eV增加至4.64 eV。实验结果为透明导电化合物半导体(GaxIn1−x)2O3薄膜在光电和光伏行业的应用,特别是在显示器、发光二极管和太阳能电池的应用奠定了基础。

关键词:(GaxIn1−x)2O3薄膜;带隙可调谐;磁控溅射

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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