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Journal of Zhejiang University SCIENCE A 2004 Vol.5 No.6 P.696-698

http://doi.org/10.1631/jzus.2004.0696


Fabrication of LaAlO3 film by sol-gel process with corresponding inorganic


Author(s):  Yin Ming-zhi, Wang Min-qiang, Yao Xi

Affiliation(s):  Electronic Materials Research Laboratory, Xi'an JiaoTong University, Xi'an 710049, China; more

Corresponding email(s):   ymingzhi@nwpu.edu.cn

Key Words:  Sol-gel method, LaAlO3 film, Dielectric constant


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Yin Ming-zhi, Wang Min-qiang, Yao Xi. Fabrication of LaAlO3 film by sol-gel process with corresponding inorganic[J]. Journal of Zhejiang University Science A, 2004, 5(6): 696-698.

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%A Yao Xi
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T1 - Fabrication of LaAlO3 film by sol-gel process with corresponding inorganic
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DOI - 10.1631/jzus.2004.0696


Abstract: 
Well-cubic perovskite lanthanum aluminate (LaAlO3) film on (110) silicon substrate was fabricated by sol-gel method with corresponding inorganic salts. Lanthanum acetate and aluminum acetate glacial acetic acid solutions were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate after being refluxed. (CH3CO)2O removed nitrates and the crystallized H2O completely, acetylacetone (AcAc) was partially bidentated with metallic ion of the metallic acetates and formed La(OAc)3-x(AcAc)x, which were hydrolyzed into La(AcAc)3-x(OH)x by adding 10 ml 0.4% methyl cellulose (MCL) solution. The La(AcAc)3-x(OH)x, polymerizing and combining with MCL, formed the LaAlO3 sol precursor with heteropolymeric structure and formed film easily. The epitaxial laAlO3 film on Si(110) substrate was crystallized after being annealed in thermal annealing furnace for 650-750 °C/30 min. The morphologies and microstructures were characterized. The refractive index of the LAO film was 1.942 to 2.007; the dielectric constant and the dissipation factors were estimated to be 23-26 and 2.1×10-4-2.4×10-4respectively.

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Reference

[1] Il'in, K.S., Siegel, M., 2002. Microwave mixing in microbridges made from YBa2Cu3O7-xthin films.J. Appl. Phys.,92(1):361-369.

[2] Park, B.E., Ishiwara., H., 2003. Formation of LaAlO3films on Si(100) substrates using molecular beam deposition.Appl. Phys. Lett.,82(8):1197-1200.

[3] Penanoya, M., Lopezlopez, M., Arean, C., 2001. Alkoxy derived high surface area perovskites BaTiO3and LaAlO3.J. Mater. Lett.,20:819-823.

[4] Shoup, S.S., Paranthaman, M., Beach, D.B., Secht, E.D., Williams, R.K., 1997. Sol-gel synthesis of LaAlO3: epitaxial growth of LaAlO3thin films on SrTiO3.J.Mater. Res.,12(4):1017-1023.

[5] Xiang, H.B., Lu, L.Y., Guo, H.Z., Liu, L.F., Zhou, Y.L., Yang, G.Z., 2003. Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures.J. Appl. Phys.,93(1):533-536.

[6] Xu, Y., Shi, D., 2003. Fabrication of high-critical current density YBa2Cu3O7-

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