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CLC number: TN2

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Received: 2006-04-10

Revision Accepted: 2006-08-21

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Journal of Zhejiang University SCIENCE A 2006 Vol.7 No.12 P.1968-1972


Rate-equation-based VCSEL thermal model and simulation

Author(s):  LIU Jie, CHEN Wen-lu, LI Yu-quan

Affiliation(s):  Jiangnan Institute of Computing Technology, Wuxi 214083, China; more

Corresponding email(s):   flybirdlj@163.com

Key Words:  Carrier leakage, Vertical-Cavity Surface-Emitting Lasers (VCSELs), Rate-equation, Thermal model, SPICE simulation

LIU Jie, CHEN Wen-lu, LI Yu-quan. Rate-equation-based VCSEL thermal model and simulation[J]. Journal of Zhejiang University Science A, 2006, 7(12): 1968-1972.

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author="LIU Jie, CHEN Wen-lu, LI Yu-quan",
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publisher="Zhejiang University Press & Springer",

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%A LIU Jie
%A CHEN Wen-lu
%A LI Yu-quan
%J Journal of Zhejiang University SCIENCE A
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%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2006.A1968

T1 - Rate-equation-based VCSEL thermal model and simulation
A1 - LIU Jie
A1 - CHEN Wen-lu
A1 - LI Yu-quan
J0 - Journal of Zhejiang University Science A
VL - 7
IS - 12
SP - 1968
EP - 1972
%@ 1673-565X
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PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.2006.A1968

In this paper, we present a simple thermal model of Vertical-Cavity Surface-Emitting Laser (VCSEL) light-current (LI) characteristics based on the rate-equation. The model can be implemented in conventional SPICE-like circuit simulators, including HSPICE, and be used to simulate the key features of VCSEL. The results compare favorably with experimental data from a device reported in the literature. The simple empirical model is especially suitable for Computer Aided Design (CAD), and greatly simplifies the design of optical communication systems.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


[1] Badilita, V., Carlin, J.F., Ilegems, M., 2004. Rate-equation model for coupled-cavity surface-emitting lasers. IEEE J. Quantum Electron., 40(12):1646-1656.

[2] Bruensteiner, M., Papen, G.C., 1999. Extraction of VCSEL rate-equation parameters for low-bias system simulation. IEEE J. Select. Topics Quantum Electron., 5(3):487-494.

[3] Mao, L.H., Chen, H.D., Tang, J., 2002. Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting lasers. CHINESE J. Semiconductors, 23(1):82-86.

[4] Mena, P.V., Morikuni, J.J., Kang, S.M., Harton, A.V., Wyatt, K.W., 1999. A comprehensive circuit-level model of vertical-cavity surface-emitting lasers. IEEE J. Lightwave Technol., 17(12):2612-2632.

[5] Scott, J.W., Geels, R.S., Corzine, S.W., Coldren, L.A., 1993. Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance. IEEE J. Quantum Electron., 29(5):1295-1308.

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