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CLC number: TN47

On-line Access: 2013-10-08

Received: 2013-02-23

Revision Accepted: 2013-06-28

Crosschecked: 2013-09-16

Cited: 3

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Journal of Zhejiang University SCIENCE C 2013 Vol.14 No.10 P.799-807


Regularized level-set-based inverse lithography algorithm for IC mask synthesis

Author(s):  Zhen Geng, Zheng Shi, Xiao-lang Yan, Kai-sheng Luo

Affiliation(s):  Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   gengzhen@vlsi.zju.edu.cn

Key Words:  Inverse lithography technology, Complexity, Level set, Regularization

Zhen Geng, Zheng Shi, Xiao-lang Yan, Kai-sheng Luo. Regularized level-set-based inverse lithography algorithm for IC mask synthesis[J]. Journal of Zhejiang University Science C, 2013, 14(10): 799-807.

@article{title="Regularized level-set-based inverse lithography algorithm for IC mask synthesis",
author="Zhen Geng, Zheng Shi, Xiao-lang Yan, Kai-sheng Luo",
journal="Journal of Zhejiang University Science C",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Regularized level-set-based inverse lithography algorithm for IC mask synthesis
%A Zhen Geng
%A Zheng Shi
%A Xiao-lang Yan
%A Kai-sheng Luo
%J Journal of Zhejiang University SCIENCE C
%V 14
%N 10
%P 799-807
%@ 1869-1951
%D 2013
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1300050

T1 - Regularized level-set-based inverse lithography algorithm for IC mask synthesis
A1 - Zhen Geng
A1 - Zheng Shi
A1 - Xiao-lang Yan
A1 - Kai-sheng Luo
J0 - Journal of Zhejiang University Science C
VL - 14
IS - 10
SP - 799
EP - 807
%@ 1869-1951
Y1 - 2013
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1300050

inverse lithography technology (ILT) is one of the promising resolution enhancement techniques, as the advanced IC technology nodes still use the 193 nm light source. In ILT, optical proximity correction (OPC) is treated as an inverse imaging problem to find the optimal solution using a set of mathematical approaches. Among all the algorithms for ILT, the level-set-based ILT (LSB-ILT) is a feasible choice with good production in practice. However, the manufacturability of the optimized mask is one of the critical issues in ILT; that is, the topology of its result is usually too complicated to manufacture. We put forward a new algorithm with high pattern fidelity called regularized LSB-ILT implemented in partially coherent illumination (PCI), which has the advantage of reducing mask complexity by suppressing the isolated irregular holes and protrusions in the edges generated in the optimization process. A new regularization term named the Laplacian term is also proposed in the regularized LSB-ILT optimization process to further reduce mask complexity in contrast with the total variation (TV) term. Experimental results show that the new algorithm with the Laplacian term can reduce the complexity of mask by over 40% compared with the ordinary LSB-ILT.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


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