Full Text:  <300>

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CLC number: TN92; TN43

On-line Access: 2023-01-21

Received: 2022-03-04

Revision Accepted: 2022-08-21

Crosschecked: 2023-01-21

Cited: 0

Clicked: 207

Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Jie CUI

https://orcid.org/0000-0003-3393-8559

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Frontiers of Information Technology & Electronic Engineering 

Accepted manuscript available online (unedited version)


High linearity U-band power amplifier design: a novel intermodulation point analysis method


Author(s):  Jie CUI, Peipei LI, Weixing SHENG

Affiliation(s):  School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Corresponding email(s):  cuijie@njust.edu.cn

Key Words:  CMOS silicon-on-insulator (SOI); Linearity analysis; Milimeter wave (mm-Wave); Power amplifier


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Jie CUI, Peipei LI, Weixing SHENG. High linearity U-band power amplifier design: a novel intermodulation point analysis method[J]. Frontiers of Information Technology & Electronic Engineering , 2023, 24(12): 176-186.

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journal="Frontiers of Information Technology & Electronic Engineering",
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pages="176-186",
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publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2200082"
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Abstract: 
A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system. Nonlinear distortion can result in system bit error, out-of-band radiation, and interference with other channels, which severely influence communication system’s quality and reliability. Starting from the third-order intermodulation point of the milimeter wave (mm-Wave) power amplifiers, the circuit’s nonlinearity is compensated for. The analysis, design, and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator (SOI) technology are presented. Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies. According to nonlinear analysis and on-wafer measurements, designs based on triple cascode cells outperform those based on cascode cells. Using single-ended measurements, the differential power amplifier achieves a measured peak power-added efficiency (PAE) of 47.2% and a saturated output power (Psat) of 25.2 dBm at 44 GHz. The amplifier achieves a Psat higher than 23 dBm and a maximum PAE higher than 25% in the measured bandwidth from 44 GHz to 50 GHz.

高线性度U波段功率放大器设计:新型交调点分析方法

崔杰,李佩佩,盛卫星
南京理工大学电子工程与光电技术学院,中国南京市,210094
摘要:功率放大器的线性度决定了通信系统的信号发射质量与系统的发射效率。非线性失真会导致系统误码、带外辐射以及临近信道干扰,严重影响着通信系统的质量和可靠性。论文从毫米波功率放大器的三阶互调点入手,对电路的非线性进行补偿。介绍了基于格罗方德(GlobalFoundries) 45 nm绝缘体硅工艺的AB类线性毫米波功率放大器(PA)的分析、设计和测试情况。设计了三种工作在U波段的基于共源共栅和三管堆叠单元结构的单端和差分堆叠功率放大器。根据非线性分析和在片测试结果对比,发现基于三管堆叠单元的设计要优于基于共源共栅单元的设计。使用单端测量方法设计的差分功率放大器在44 GHz时实现了47.2%的峰值功率附加效率(PAE)和25.2 dBm的饱和输出功率(Psat)。该放大器在44 GHz至50 GHz的工作带宽内实现了Psat高于23 dBm和峰值PAE高于25%的性能。

关键词组:绝缘体硅;线性分析;毫米波;功率放大器

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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