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Journal of Zhejiang University SCIENCE A 1998 Vol.-1 No.-1 P.

http://doi.org/10.1631/jzus.A2400503


EPDI-transfer learning method for highly accurate prediction of lithium diffusion barriers on TMD surfaces


Author(s):  Jian CHEN1, 2, Yao KANG1, 2, Xudong WANG1, 2, Hao HUANG1, Man YAO1, 2

Affiliation(s):  1School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China; more

Corresponding email(s):   yaoman@dlut.edu.cn

Key Words:  Transition metal dichalcogenide, Deep learning, Transfer learning, Electrostatic potential, Lithium-diffusion


Jian CHEN1,2, Yao KANG1,2, Xudong WANG1,2, Hao HUANG1, Man YAO1,2. EPDI-transfer learning method for highly accurate prediction of lithium diffusion barriers on TMD surfaces[J]. Journal of Zhejiang University Science A, 1998, -1(-1): .

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publisher="Zhejiang University Press & Springer",
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Abstract: 
Calculating the inter-layer ion diffusion barrier, a crucial metric for evaluating the rate performance of 2D electrode materials, is time-consuming using the transition state search approach. A novel EPDI (electrostatic potential distribution image) transfer learning method has been proposed to efficiently and accurately predict the lithium diffusion barriers on metal element-doped transition metal dichacogenide (TMD) surfaces. Through the analysis of the mean electrostatic potential (MEP) around binding sites, a positive correlation between binding energy and MEP in VIB TMDs was identified. Subsequently, transfer learning (TL) techniques were used to develop a DenseNet121-TL model for establishing a more accurate mapping between the binding energy and electrostatic potential distribution. Trained on training sets containing 33% and 50% transition state search cal-culation results, which save 66% and 50% of the calculation time, respectively, the model achieves accurate predictions of the saddle point binding energy with mean absolute errors (MAEs) of 0.0444 eV and 0.0287 eV on the testing set. Based on the prediction of saddle point binding energies, we obtained a diffusion minimum energy profile with an MAE of 0.0235 eV. Furthermore, by analyzing the diffusion data, we observed that the diffusion barrier was lowered by 10% on V-doped TiS? compared to the stoichiometric surface. Our findings are expected to provide new insights for the high-throughput calculation of ion diffusion on 2D materials.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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