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CLC number: TN43

On-line Access: 2023-05-06

Received: 2022-03-01

Revision Accepted: 2022-09-13

Crosschecked: 2023-05-06

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Citations:  Bibtex RefMan EndNote GB/T7714

 ORCID:

Ayoub SADEGHI

https://orcid.org/0000-0001-9904-9813

Hossein GHASEMIAN

https://orcid.org/0000-0002-8069-8845

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Frontiers of Information Technology & Electronic Engineering  2023 Vol.24 No.4 P.599-616

http://doi.org/10.1631/FITEE.2200077


Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits


Author(s):  Ayoub SADEGHI, Razieh GHASEMI, Hossein GHASEMIAN, Nabiollah SHIRI

Affiliation(s):  Department of Electrical Engineering, Shiraz Branch, Islamic Azad University, Shiraz 7198774731, Iran; more

Corresponding email(s):   H.ghasemian@sutech.ac.ir

Key Words:  Carbon nanotube field-effect transistor (CNTFET), Optimization algorithm, Nondominated sorting based genetic algorithm II (NSGA-II), Gate diffusion input (GDI), Approximate computing


Ayoub SADEGHI, Razieh GHASEMI, Hossein GHASEMIAN, Nabiollah SHIRI. Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits[J]. Frontiers of Information Technology & Electronic Engineering, 2023, 24(4): 599-616.

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Abstract: 
Carbon nanotube field-effect transistors (CNTFETs) are reliable alternatives for conventional transistors, especially for use in approximate computing (AC) based error-resilient digital circuits. In this paper, CNTFET technology and the gate diffusion input (GDI) technique are merged, and three new AC-based full adders (FAs) are presented with 6, 6, and 8 transistors, separately. The nondominated sorting based genetic algorithm II (NSGA-II) is used to attain the optimal performance of the proposed cells by considering the number of tubes and chirality vectors as its variables. The results confirm the circuits’ improvement by about 50% in terms of power-delay-product (PDP) at the cost of area occupation. The Monte Carlo method (MCM) and 32-nm CNTFET technology are used to evaluate the lithographic variations and the stability of the proposed circuits during the fabrication process, in which the higher stability of the proposed circuits compared to those in the literature is observed. The dynamic threshold (DT) technique in the transistors of the proposed circuits amends the possible voltage drop at the outputs. Circuitry performance and error metrics of the proposed circuits nominate them for the least significant bit (LSB) parts of more complex arithmetic circuits such as multipliers.

基于特定最低有效位动态阈值碳纳米管场效应晶体管的高效优化近似栅极扩散输入全加器

Ayoub SADEGHI1,Razieh GHASEMI2,Hossein GHASEMIAN3,Nabiollah SHIRI1
1伊斯兰阿扎德大学设拉子分校电气工程系,伊朗设拉子,7198774731
2伊朗科技大学电气工程学院,伊朗德黑兰,1684613114
3设拉子技术大学电气与电子工程系,伊朗设拉子,7155713876
摘要:碳纳米管场效应晶体管(CNTFET)可替代传统晶体管,尤其在基于近似计算的容错数字电路中。本文结合CNTFET技术和栅极扩散输入(GDI)技术,提出3种分别具有6、6和8个晶体管的基于近似计算的全加器。采用基于非支配排序的遗传算法II,将管数和手性向量作为变量,对所提单元进行性能寻优。结果表明,在电路面积有所增加的情况下,功耗延时积性能指标提升约50%。采用蒙特卡罗方法(MCM)和32 nm CNTFET技术,评估所提电路在制造过程中的工艺偏差和稳定性。与文献中的方法相比,所提电路具有更高稳定性。在电路晶体管中使用的动态阈值技术修正了可能出现的输出压降。所提电路出色的电路性能和差错率使其可以作为复杂算术电路(如乘法器)的最低有效位(LSB)部分。

关键词:碳纳米管场效应晶体管(CNTFET);优化算法;基于非支配排序的遗传算法II(NSGA-II);栅极扩散输入(GDI);近似计算

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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