Full Text:   <1976>

CLC number: TN389

On-line Access: 

Received: 2000-06-26

Revision Accepted: 2000-12-06

Crosschecked: 0000-00-00

Cited: 0

Clicked: 3595

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
1. Reference List
Open peer comments

Journal of Zhejiang University SCIENCE A 2001 Vol.2 No.2 P.174-178

http://doi.org/10.1631/jzus.2001.0174


A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY


Author(s):  LI Hong, RUAN Hang-yu

Affiliation(s):  Faculty of Information Science and Technology, Ningbo University, Ningbo 315211, China; more

Corresponding email(s): 

Key Words:  surge absorber, gas discharge, microgap, semiconductor technology


Share this article to: More

LI Hong, RUAN Hang-yu. A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY[J]. Journal of Zhejiang University Science A, 2001, 2(2): 174-178.

@article{title="A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY",
author="LI Hong, RUAN Hang-yu",
journal="Journal of Zhejiang University Science A",
volume="2",
number="2",
pages="174-178",
year="2001",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2001.0174"
}

%0 Journal Article
%T A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY
%A LI Hong
%A RUAN Hang-yu
%J Journal of Zhejiang University SCIENCE A
%V 2
%N 2
%P 174-178
%@ 1869-1951
%D 2001
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2001.0174

TY - JOUR
T1 - A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY
A1 - LI Hong
A1 - RUAN Hang-yu
J0 - Journal of Zhejiang University Science A
VL - 2
IS - 2
SP - 174
EP - 178
%@ 1869-1951
Y1 - 2001
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2001.0174


Abstract: 
A new type microgap surge absorber fabricated by only semiconductor technique has in it a special structure silicon chip which forms microgaps for gas discharge with electrodes, and has advantages such as small size, low cost, suitability for mass production besides the desirable characteristics that common microgap surge absorbers have. Applications of this absorber in communication facilities are discussed.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Reference

[1] Ando, K.,Oshige, T.,Tachibana, K. et al.,1985. Discharge Processes in a Low-Voltage Microgap Surge Absorber. IEEE Trans., IA-21(6):1349-1353.

[2] Baizer, Y.P.,1991. Gas Discharge Physics, Springer-Verlag.

[3] Boylett, F.D.A., Macleam, I.G.,1971. The propagation of electric discharge across the surface of an electrolyte, Proc.Roy.Soc., A324: 469.

[4] Lebedeva,N.N., Orbukh, V.I. and Salamov, B.G.,1996. Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor, J.Phys.III France, 6: 797-805.

[5] Tachibana, K., Okubo, S. and Oshige, T., 1980. The discharge of microgaps and their application to surge absorber(in Japanese). Trans. Inst. Elec. Eng. Japan, 100-A(3):169-176.

[6] Xu, X. J. And Zhu, D. C.,1996. Gas Discharge Physics, Fudan University Press, Shanghai, p.121-134.

Open peer comments: Debate/Discuss/Question/Opinion

<1>

Please provide your name, email address and a comment





Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - 2022 Journal of Zhejiang University-SCIENCE