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One-dimensional reconfigurable three-stage Doherty power amplifier with load mismatch resilience
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Yi ZHANG, Ruibin GAO, Shuang LIU, Yujie HAN, Meng REN, Hanhui LIN, Jingzhou PANG‡. One-dimensional reconfigurable three-stage Doherty power amplifier with load mismatch resilience[J]. Frontiers of Information Technology & Electronic Engineering, 1998, -1(-1): .
@article{title="One-dimensional reconfigurable three-stage Doherty power amplifier with load mismatch resilience",
author="Yi ZHANG, Ruibin GAO, Shuang LIU, Yujie HAN, Meng REN, Hanhui LIN, Jingzhou PANG‡",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="-1",
number="-1",
pages="",
year="1998",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2400913"
}
%0 Journal Article
%T One-dimensional reconfigurable three-stage Doherty power amplifier with load mismatch resilience
%A Yi ZHANG
%A Ruibin GAO
%A Shuang LIU
%A Yujie HAN
%A Meng REN
%A Hanhui LIN
%A Jingzhou PANG‡
%J Journal of Zhejiang University SCIENCE C
%V -1
%N -1
%P
%@ 2095-9184
%D 1998
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2400913
TY - JOUR
T1 - One-dimensional reconfigurable three-stage Doherty power amplifier with load mismatch resilience
A1 - Yi ZHANG
A1 - Ruibin GAO
A1 - Shuang LIU
A1 - Yujie HAN
A1 - Meng REN
A1 - Hanhui LIN
A1 - Jingzhou PANG‡
J0 - Journal of Zhejiang University Science C
VL - -1
IS - -1
SP -
EP -
%@ 2095-9184
Y1 - 1998
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2400913
Abstract: This article presents a comprehensive theoretical analysis of the resilience demonstrated by the three-stage doherty power amplifier (DPA) when operating under load mismatch conditions. Additionally, a novel reconfigurable three-stage DPA architecture is introduced, with the aim of enhancing resilience to load mismatch using of exceptionally simple circuits and a one-dimensional (1-D) control method. To validate the efficacy of this proposed architecture and control approach, a DPA prototype employing commercial gallium nitride (GaN) active devices has been designed and meticulously fabricated at 2 GHz. With a matched 50 Ω load, the fabricated threestage DPA achieves a high-efficiency range of 9.5 dB with ≥ larger than 51% back-off drain efficiency (DE). Through the proposed 1-D control, the DPA presents 47.0% - 55.1% back-off efficiency with ≤ 2 dB power fluctuation at a 2:1 voltage standing wave ratio (VSWR) over a 360◦ phase span. When driven by a 20 MHz long term evolution (LTE) signal with an 8 dB peak to average power ratio (PAPR), the DPA achieves 46.2% - 53.9% average efficiency and better than -21 dBc adjacent channel power ratio (ACPR) without digital pre-distortion (DPD) under load mismatch conditions.
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