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CLC number: TN389
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Received: 2000-06-26
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A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY
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LI Hong, RUAN Hang-yu. A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY[J]. Journal of Zhejiang University Science A, 2001, 2(2): 174-178.
@article{title="A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY",
author="LI Hong, RUAN Hang-yu",
journal="Journal of Zhejiang University Science A",
volume="2",
number="2",
pages="174-178",
year="2001",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2001.0174"
}
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%A LI Hong
%A RUAN Hang-yu
%J Journal of Zhejiang University SCIENCE A
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%P 174-178
%@ 1869-1951
%D 2001
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2001.0174
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A1 - LI Hong
A1 - RUAN Hang-yu
J0 - Journal of Zhejiang University Science A
VL - 2
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EP - 178
%@ 1869-1951
Y1 - 2001
PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.2001.0174
Abstract: A new type microgap surge absorber fabricated by only semiconductor technique has in it a special structure silicon chip which forms microgaps for gas discharge with electrodes, and has advantages such as small size, low cost, suitability for mass production besides the desirable characteristics that common microgap surge absorbers have. Applications of this absorber in communication facilities are discussed.
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[3] Boylett, F.D.A., Macleam, I.G.,1971. The propagation of electric discharge across the surface of an electrolyte, Proc.Roy.Soc., A324: 469.
[4] Lebedeva,N.N., Orbukh, V.I. and Salamov, B.G.,1996. Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor, J.Phys.III France, 6: 797-805.
[5] Tachibana, K., Okubo, S. and Oshige, T., 1980. The discharge of microgaps and their application to surge absorber(in Japanese). Trans. Inst. Elec. Eng. Japan, 100-A(3):169-176.
[6] Xu, X. J. And Zhu, D. C.,1996. Gas Discharge Physics, Fudan University Press, Shanghai, p.121-134.
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