Full Text:
<2709>
CLC number: TN304
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 0000-00-00
Cited: 0
Clicked: 5319
Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE
| |||||||||||||
SHEN Da-ke, SOU I. K., HAN Gao-rong, DU Pi-yi, QUE Duan-lin. Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE[J]. Journal of Zhejiang University Science A, 2003, 4(2): 131-135.
@article{title="Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE",
author="SHEN Da-ke, SOU I. K., HAN Gao-rong, DU Pi-yi, QUE Duan-lin",
journal="Journal of Zhejiang University Science A",
volume="4",
number="2",
pages="131-135",
year="2003",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.2003.0131"
}
%0 Journal Article
%T Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE
%A SHEN Da-ke
%A SOU I. K.
%A HAN Gao-rong
%A DU Pi-yi
%A QUE Duan-lin
%J Journal of Zhejiang University SCIENCE A
%V 4
%N 2
%P 131-135
%@ 1869-1951
%D 2003
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2003.0131
TY - JOUR
T1 - Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE
A1 - SHEN Da-ke
A1 - SOU I. K.
A1 - HAN Gao-rong
A1 - DU Pi-yi
A1 - QUE Duan-lin
J0 - Journal of Zhejiang University Science A
VL - 4
IS - 2
SP - 131
EP - 135
%@ 1869-1951
Y1 - 2003
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2003.0131
Abstract: MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270°C to 330°C. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290°C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.
[1]Chaudhari, G.N., Sardesai, S.N., Sathaye, S.D. and Rao, V.J., 1992. Structural properties of ZnSxSe1-x thin films on GaAs (110) substrate. J. Materials Science, 27:4647-4650.
[2]Gupta, P., Bhattacharyya, D., Chaudhuri, S. and Pal, A.K., 1992. Preparation and characterization of polycrystalline ZnSxSe1-x films prepared by a two-zone hot wall technique. Thin Solid Films, 221:154-159.
[3]Ihanus, J., Ritala, M., Leskelä, M. and Rauhala, E., 1997. ALE growth of ZnS1-xSex thin films by substituting surface sulfur with elemental selenium. Applied Surface Science, 112:154-158.
[4]Ivanov, S., Toropov, A., Sorokin, S., Shubina, T., Lebedev, A., Kop'er, P., Alferov, Z., Luganer, H.J., Reuscher, G., Keim, M., Fischer, F., Waag, A. and Landwehr, G., 1998. ZnSe-based blue-green lasers with a short-period superlattice waveguide. Appl. Phys. Lett., 73(15):2104-2106.
[5]Li, J.M., Chiang, J.D., Su, Y.K. and Yokoyama, M., 1994. The preparation of ZnS thin films on an indium tin oxide/glass substrate by low-pressure metalorganic chemical vapor deposition. J. Cryst. Growth, 137:421-426.
[6]Sou, I.K., Ma, Z.H. and Wong, G.K.L., 1999. Photoresponse studies of ZnSSe visible-blind ultraviolet detectors: A comparison to ZnSTe detectors. Appl. Phys. Lett.,75(23):3707-3709.
Open peer comments: Debate/Discuss/Question/Opinion
<1>