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Journal of Zhejiang University SCIENCE A 2003 Vol.4 No.2 P.131-135


Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE

Author(s):  SHEN Da-ke, SOU I. K., HAN Gao-rong, DU Pi-yi, QUE Duan-lin

Affiliation(s):  State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s): 

Key Words:  MBE(molecular beam epitaxy), Polycrystalline ZnSxSe1-x thin film, ITO glass, Structural characterizations

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SHEN Da-ke, SOU I. K., HAN Gao-rong, DU Pi-yi, QUE Duan-lin. Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE[J]. Journal of Zhejiang University Science A, 2003, 4(2): 131-135.

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publisher="Zhejiang University Press & Springer",

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%T Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE
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%DOI 10.1631/jzus.2003.0131

T1 - Polycrystalline ZnSxSe1-x thin films deposited on ITO glass by MBE
A1 - SHEN Da-ke
A1 - SOU I. K.
A1 - HAN Gao-rong
A1 - DU Pi-yi
A1 - QUE Duan-lin
J0 - Journal of Zhejiang University Science A
VL - 4
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EP - 135
%@ 1869-1951
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PB - Zhejiang University Press & Springer
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DOI - 10.1631/jzus.2003.0131

MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270°C to 330°C. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290°C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure.

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