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Abstract: An efficient and accurate analytical model for piezoelectric bimorph based on the improved first-order shear deformation theory (FSDT) is developed in this work. The model combines the equivalent single-layer approach for mechanical displacements and a layerwise-type modelling of the electric potential. Particular attention is devoted to the boundary conditions on the outside faces and to the interface continuity conditions of the bimorphs for the electromechanical variables. shear correction factor (k) is introduced to modify both the shear stress and the electric displacement of each layer. And the detailed mathematical derivations are presented. free vibration problem of simply supported piezoelectric bimorphs with series or parallel arrangement is investigated for the closed circuit condition, and the results for different length-to-thickness ratios are compared with those obtained from the exact 2D solution. Excellent agreements between the present model prediction with k=8/9 and the exact solutions are observed for the resonant frequencies.

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