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Abstract: This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology.

[1] Aroutiounian, V.M., Ghulinyan, M.Z., 2003. Electrical conductivity mechanisms in porous silicon. Phys. Stat. Sol. (a), 197(2):462-466.

[2] Averkiev, N.S., Kazakova, L.P., Smirnova, N.N., 2002. Carrier transport in porous silicon. Semiconductors, 36(3):336-339.

[3] Balagurov, L.A., Yarkin, D.G., Petrova, E.A., 2000. Electronic transport in porous silicon of low porosity made on a P⁺ substrate. Materials Science and Engineering, B69-70:127-131.

[4] Balagurov, L.A., Bayliss, S.C., Orlov, A.F., Petrova, E.A., Unal, B., Yarkin, D.G., 2001. Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer. J. Appl. Phys., 90(8):4184-4190.

[5] Balucani, M., Bondarenko, V., Franchina, L., Lamedica, G., Yakovtseva, V.A., Ferrari, A., 1999. A model of radiative electrical contacts to porous silicon. Appl. Phys. Lett., 74(14):1960-1962.

[6] Boukherroub, R., Wayner, D.D.M., Lockwood, D.J., 2002. Photoluminescence stabilization of anodically-oxidized porous silicon layers by chemical functionalization. Appl. Phys. Lett., 81(4):601-603.

[7] Cadet, C., Deresmes, D., Vuillaume, D., Stievenard, D., 1994. Influence of surface defects on the electrical behavior of aluminum-porous silicon junction. Appl. Phys. Lett., 64(21):2827-2829.

[8] Chen, Z.L., Lee, T.Y., Bosman, G., 1994a. Electrical band gap of porous silicon. Appl. Phys. Lett., 64(25):3446-3448.

[9] Chen, Z.L., Lee, T.Y., Bosman, G., 1994b. Electrical characterization and modelling of wide-band-gap porous silicon p-n diodes. J. Appl. Phys., 76(4):2499-2504.

[10] Chorin, M.B., Kux, A., Schechter, I., 1994. Absorbate effects on photoluminescence and electrical conductivity of porous silicon. Appl. Phys. Lett., 64(4):481-483.

[11] Ciurea, M.L., Baltog, I., Lazar, M., Iancu, V., Lazanu, S., Pentia, E., 1998. Electrical behavior of fresh and stored porous silicon films. Thin Solid Films, 325:271-277.

[12] Dafinei, A.S., Dafinei, A.A., 1999. On the electrical conductivity in porous silicon under light and electron beams. Journal of Non-Crystalline Solids, 245:92-96.

[13] Deresmes, D., Marissael, V., Stievenard, D., Ortega, C., 1995. Electrical behavior of aluminum-porous silicon junctions. Thin Solid Films, 255:258-261.

[14] Diligenti, A., Nannini, A., Pennelli, G., Pellegrini, V., Fuso, F., Allegrini, M., 1996. Electrical characterization of metal schottky contacts on luminescent porous silicon. Thin Solid Films, 276:179-182.

[15] Kaganovich, E.B., Manoilov, E.G., Svechnikov, S.V., 1999. Photosensitive structures based on porous silicon. Semiconductors, 33(3):327-331.

[16] Koker, L., Wellner, A., Sherratt, P.A.J., Neuendorf, R., Kolasinski, K.W., 2003. Etchant composition effects on porous silicon morphology and photoluminescence. Phys. Stat. Sol. (a), 197(1):117-122.

[17] Li, H.L., Xu, D.S., Guo, G.L., Gui, L.L., Tang, Y.Q., Ai, X.C., Sun, Z.Y., Zhang, X.K., Qin, G.G., 2000. Intense and stable blue-violet emission from porous silicon modified with alkyls. J. Appl. Phys., 88(7):4446-4448.

[18] Palma, R.J.M., Rigueiro, J.P., Lemus, R.G., Moreno, J.D., Duart, J.M.M., 1999a. Aging of aluminum electrical contacts to porous silicon. J. Appl. Phys., 85(1):583-586.

[19] Palma, R.J.M., Rigueiro, J.P., Duart, J.M.M., 1999b. Study of carrier transport in metal/porous silicon/Si structures. J. Appl. Phys., 86(12):6911-6914.

[20] Pazebutas, V., Krotkus, A., Gimkiene, I., Viselga, R.J., 1995. Electric and photoelectric properties of diode structures in porous silicon. Appl. Phys., 77(6):2501-2507.

[21] Peng, C., Hirschman, K.D., Fauchet, P.M., 1996. Carrier transport in porous silicon light emitting devices. J. Appl. Phys., 80(1):295-300.

[22] Remaki, B., Populaire, C., Lysenko, V., Barbier, D., 2003. Electrical barrier properties of meso-porous silicon. Materials Science and Engineering, B101:313-317.

[23] Romstad, F.P., Veje, E., 1997. Experiment determination of the electrical band-gap energy of porous silicon and the band offsets at the porous silicon/crystalline silicon hetejunction. Physical Review B, 55(8):5220-5225.

[24] Stievenard, D., Deresmes, D., 1995. Are electrical properties of an aluminum-porous silicon junction governed by dangling bonds? Appl. Phys. Lett., 67(11):1570-1572.

[25] Zimin, S.P., Bragin, A.N., 1999. Conductivity relaxation in coated porous silicon after annealing. Semiconductors, 33(4):457-460.