CLC number: TN402
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2016-12-23
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Zamshed Iqbal Chowdhury, Md. Istiaque Rahaman, M. Shamim Kaiser. Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects[J]. Frontiers of Information Technology & Electronic Engineering, 2017, 18(2): 262-271.
@article{title="Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects",
author="Zamshed Iqbal Chowdhury, Md. Istiaque Rahaman, M. Shamim Kaiser",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="18",
number="2",
pages="262-271",
year="2017",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.1500349"
}
%0 Journal Article
%T Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects
%A Zamshed Iqbal Chowdhury
%A Md. Istiaque Rahaman
%A M. Shamim Kaiser
%J Frontiers of Information Technology & Electronic Engineering
%V 18
%N 2
%P 262-271
%@ 2095-9184
%D 2017
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1500349
TY - JOUR
T1 - Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects
A1 - Zamshed Iqbal Chowdhury
A1 - Md. Istiaque Rahaman
A1 - M. Shamim Kaiser
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 18
IS - 2
SP - 262
EP - 271
%@ 2095-9184
Y1 - 2017
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1500349
Abstract: The single-walled carbon nanotube (SWCNT) is a promising nanostructure in the design of future high-frequency system-on-chip, especially in network-on-chip, where the quality of communication between intellectual property (IP) modules is a major concern. Shrinking dimensions of circuits and systems have restricted the use of high-frequency signal characteristics for frequencies up to 1000 GHz. Four key electrical parameters, impedance, propagation constant, current density, and signal delay time, which are crucial in the design of a high-quality interconnect, are derived for different structural configurations of SWCNT. Each of these parameters exhibits strong dependence on the frequency range over which the interconnect is designed to operate, as well as on the configuration of SWCNT. The novelty of the proposed model for solving next-generation high-speed integrated circuit (IC) interconnect challenges is illustrated, compared with existing theoretical and experimental results in the literature.
In this paper, the authors proposed a mathematical model for high frequency analysis of CNT interconnects. The overall quality is good.
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