Full Text:   <4724>

CLC number: TB43

On-line Access: 

Received: 2005-07-20

Revision Accepted: 2005-12-03

Crosschecked: 0000-00-00

Cited: 0

Clicked: 6506

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
1. Reference List
Open peer comments

Journal of Zhejiang University SCIENCE A 2006 Vol.7 No.3 P.472-476


Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

Author(s):  Xu Xuan-qian, Ye Hui, Zou Tong

Affiliation(s):  State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   xqianx@hotmail.com, hui_ye@hotmail.com

Key Words:  Titanium nitride (TiN), Thin film, Sputtering, Orientation, Waveguide

Share this article to: More <<< Previous Article|

Xu Xuan-qian, Ye Hui, Zou Tong. Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide[J]. Journal of Zhejiang University Science A, 2006, 7(3): 472-476.

@article{title="Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide",
author="Xu Xuan-qian, Ye Hui, Zou Tong",
journal="Journal of Zhejiang University Science A",
publisher="Zhejiang University Press & Springer",

%0 Journal Article
%T Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide
%A Xu Xuan-qian
%A Ye Hui
%A Zou Tong
%J Journal of Zhejiang University SCIENCE A
%V 7
%N 3
%P 472-476
%@ 1673-565X
%D 2006
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.2006.A0472

T1 - Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide
A1 - Xu Xuan-qian
A1 - Ye Hui
A1 - Zou Tong
J0 - Journal of Zhejiang University Science A
VL - 7
IS - 3
SP - 472
EP - 476
%@ 1673-565X
Y1 - 2006
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.2006.A0472

Optimal parameters for depositing titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures, different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 °C, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


[1] Arnell, R.D., Colligon, J.S., Minnebaev, K.F., Yurasova, V.E., 1996. The effect of nitrogen content on the structure and mechanical properties of TiN films produced by magnetron sputtering. Vacuum, 47(5):425-431.

[2] Banerjee, R., Chandra, R., Ayyub, P., 2002. Influence of the sputtering gas on the preferred orientation of nanocrystalline titanium nitride thin films. Thin Solid Films, 405(1-2):64-72.

[3] Chen, Y.M., Yu, G.P., Huang, J.H., 2001. Role of process parameters in the texture evolution of TiN films deposited by hollow cathode discharge ion platingtechnol. Surf. Coat. Technol., 141(2-3):156-163.

[4] Chou, W.J., Yu, G.P., Huang, J.H., 2001. Deposition of TiN thin film on Si (100) by HCD ion plating. Surf. Coat. Technol., 140(3):206-214.

[5] Cuniot-Ponsard, M., Desvignes, J.M., Ea-Kim, B., 2003. Radio frequency magnetron sputtering deposition of hetero-epitaxial strontium barium niobate thin films (SrxBa1–xNb2O6). J. Appl. Phys., 93(3):1718-1724.

[6] Groudeva-Zotova, S., Kaltofen, R., Sebald, T., 2000. DC reactive magnetron sputter deposition of (111) textured TiN films: influence of nitrogen flow and discharge power on the texture formation. Surf. Coat. Technol., 127(2-3):144-154.

[7] Huang, J.H., Tsai, Y.P., Yu, G.P., 1999. Effect of processing parameters on the microstructure and mechanical properties of TiN film on stainless steel by HCD ion plating. Thin Solid Films, 355-356(1):440-445.

[8] Huang, J.H., Lin, C. H., Ma, C.H., Chen, H., 2000. Low energy ion beam assisted deposition of TiN thin films on silicon. Scripta. Mater., 42(6):573-579.

[9] Hultman, L., Sundgren, J.E., Greene, J.E., Bergstrom, D.B., Petrov, I., 1995. High-flux low-energy (20 eV) N2+ ion irradiation during TiN deposition by UHV reactive magnetron sputtering: Effects on microstructure and preferred orientation. J. Appl. Phys., 78(9):5395-5403.

[10] Kelly, P.J., Armell, R.D., 2000. Magnetron sputtering: A review of recent developments and applications. Vacuum, 56(3):159-172.

[11] Koch, A., Raven, C., Spanne, P., Snigirev, A., 1998. X-ray imaging with submicrometer resolution employing transparent luminescent screens. Journal of the Optical Society of America A, 15(7):1940-1951.

[12] Li, T.Q., Noda, S., Tsuji, Y., Ohsawa, T., Komiyama, H., 2002. Initial growth and texture formation during reactive magnetron. Sputtering of TiN on Si (111). J. Vac. Sci. Technol., 20(3):583-588.

[13] Murray, J.L., 1987. Phase Diagrams of Binary Titanium Alloys. ASM International, Ohio, p.176.

[14] Sundgren, J.E., 1985. Structure and properties of TiN coatings. Thin Solid Films, 128(1-2):21-44.

Open peer comments: Debate/Discuss/Question/Opinion


Please provide your name, email address and a comment

Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - 2024 Journal of Zhejiang University-SCIENCE