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CLC number: TN3

On-line Access: 2007-12-14

Received: 2007-06-25

Revision Accepted: 2007-09-30

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Journal of Zhejiang University SCIENCE A 2008 Vol.9 No.1 P.137-142

http://doi.org/10.1631/jzus.A071350


Hole transport and phonon scattering in epitaxial PbSe films


Author(s):  Jian-xiao SI, Hui-zhen WU, Tian-ning XU, Chun-fang CAO

Affiliation(s):  Department of Physics, Zhejiang University, Hangzhou 310027, China; more

Corresponding email(s):   xjsi@zju.edu.cn, hzwu@zju.edu.cn

Key Words:  Electrical properties of PbSe, Mobility, Scattering mechanism


Jian-xiao SI, Hui-zhen WU, Tian-ning XU, Chun-fang CAO. Hole transport and phonon scattering in epitaxial PbSe films[J]. Journal of Zhejiang University Science A, 2008, 9(1): 137-142.

@article{title="Hole transport and phonon scattering in epitaxial PbSe films",
author="Jian-xiao SI, Hui-zhen WU, Tian-ning XU, Chun-fang CAO",
journal="Journal of Zhejiang University Science A",
volume="9",
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pages="137-142",
year="2008",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.A071350"
}

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%A Jian-xiao SI
%A Hui-zhen WU
%A Tian-ning XU
%A Chun-fang CAO
%J Journal of Zhejiang University SCIENCE A
%V 9
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%P 137-142
%@ 1673-565X
%D 2008
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A071350

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T1 - Hole transport and phonon scattering in epitaxial PbSe films
A1 - Jian-xiao SI
A1 - Hui-zhen WU
A1 - Tian-ning XU
A1 - Chun-fang CAO
J0 - Journal of Zhejiang University Science A
VL - 9
IS - 1
SP - 137
EP - 142
%@ 1673-565X
Y1 - 2008
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.A071350


Abstract: 
The combined characterizations of mobility and phonon scattering spectra allow us to probe hole transport process in epitaxial PbSe crystalline films grown by molecular beam epitaxy (MBE). The measurements of Hall effect show p-type conductivity of PbSe epitaxial films. At 295 K, the PbSe samples display hole concentrations of (5~8)×1017 cm–3 with mobilities of about 300 cm2/(V·s), and at 77 K the hole mobility is as high as 3×103 cm2/(V·s). Five scattering mechanisms limiting hole mobilities are theoretically analyzed. The calculations and Raman scattering measurements show that, in the temperatures between 200 and 295 K, the scattering of polar optical phonon modes dominates the impact on the observed hole mobility in the epitaxial PbSe films. Raman spectra characterization observed strong optical phonon scatterings at high temperature in the PbSe epitaxial films, which is consistent with the result of the measured hole mobility.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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