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Received: 2018-07-27

Revision Accepted: 2019-01-17

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Frontiers of Information Technology & Electronic Engineering  2019 Vol.20 No.4 P.439-457

http://doi.org/10.1631/FITEE.1800451


Optoelectronic platform and technology


Author(s):  Wen-hua Shi, Wei-ming Lv, Tian-yu Sun, Bao-shun Zhang

Affiliation(s):  Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Corresponding email(s):   bszhang2006@sinano.ac.cn

Key Words:  Optoelectronic technology, Optoelectronic platform, Process technology, Development and challenges


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Wen-hua Shi, Wei-ming Lv, Tian-yu Sun, Bao-shun Zhang. Optoelectronic platform and technology[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(4): 439-457.

@article{title="Optoelectronic platform and technology",
author="Wen-hua Shi, Wei-ming Lv, Tian-yu Sun, Bao-shun Zhang",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="20",
number="4",
pages="439-457",
year="2019",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.1800451"
}

%0 Journal Article
%T Optoelectronic platform and technology
%A Wen-hua Shi
%A Wei-ming Lv
%A Tian-yu Sun
%A Bao-shun Zhang
%J Frontiers of Information Technology & Electronic Engineering
%V 20
%N 4
%P 439-457
%@ 2095-9184
%D 2019
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1800451

TY - JOUR
T1 - Optoelectronic platform and technology
A1 - Wen-hua Shi
A1 - Wei-ming Lv
A1 - Tian-yu Sun
A1 - Bao-shun Zhang
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 20
IS - 4
SP - 439
EP - 457
%@ 2095-9184
Y1 - 2019
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1800451


Abstract: 
optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.

光电子平台与工艺技术

摘要:光电子技术是由光子技术和电子技术结合形成的一门新技术。光子技术将取代电子技术,引发一场新的产业革命,给工业和社会带来巨大冲击。我们回顾光电子器件与集成技术的发展历程,对比分析光电子工艺平台的发展与特点,总结关键性制造工艺,介绍具有代表性的光电器件,并聚焦光电子技术发展亟待突破的关键技术。通过对光电子技术发展的全面梳理,认为我国应抓住机遇,实现光电子技术产业转型升级。借鉴国外先进光电子平台和技术发展经验,加快布局人才储备,注重基础工艺积累,整合建立国家级光电子技术平台,大幅提升我国光器件国产化水平和自主创新能力。

关键词:光电子技术;光电子平台;工艺技术;发展与挑战

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

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