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CLC number: TN432

On-line Access: 2011-08-03

Received: 2010-12-22

Revision Accepted: 2011-03-18

Crosschecked: 2011-07-04

Cited: 1

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Journal of Zhejiang University SCIENCE C 2011 Vol.12 No.8 P.698-706


A low drift curvature-compensated bandgap reference with trimming resistive circuit

Author(s):  Zhi-hua Ning, Le-nian He

Affiliation(s):  Institute of Very Large Scale Integrated Circuits, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   ningzh@vlsi.zju.edu.cn

Key Words:  Voltage reference, Bandgap, Temperature compensation, Low drift, Resistive trimming

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Zhi-hua Ning, Le-nian He. A low drift curvature-compensated bandgap reference with trimming resistive circuit[J]. Journal of Zhejiang University Science C, 2011, 12(8): 698-706.

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T1 - A low drift curvature-compensated bandgap reference with trimming resistive circuit
A1 - Zhi-hua Ning
A1 - Le-nian He
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DOI - 10.1631/jzus.C1000440

A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×106/°C over the temperature range of −40–125 °C after trimming. The power supply rejection (PSR) was −100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.

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[1]Alan, H., 2006. The Art of Analog Layout (2nd Ed.). Publishing House of Electronics Industry, Beijing, China, p.200-212.

[2]Atrash, A.H., Aude, A., 2004. A Bandgap Reference Circuit Utilizing Switching to Reduce Offsets and a Novel Technique for Leakage Current Compensation. 2nd Annual IEEE Northeast Workshop on Circuits and Systems, p.297-300.

[3]Behzad, R., 2005. Design of Analog CMOS Integrated Circuits. Tsinghua University Press, Beijing, China, p.27, 381.

[4]Brito, J.P.M., Bampi, S., Klimach, H., 2007. A 4-bits Trimmed CMOS Bandgap Reference with an Improved Matching Modeling Design. IEEE Int. Symp. on Circuits and Systems, p.1911-1914.

[5]Ekekwe, N., Etienne-Cummings, R., 2008. A 5-bits Precision CMOS Bandgap Reference with On-chip Bi-directional Resistance Trimming. 51st Midwest Symp. on Circuits and Systems, p.257-260.

[6]Filanovsky, I.M., Bai, B., Moore, B., 2009. A CMOS Voltage Reference Using Compensation of Mobility and Threshold Voltage Temperature Effects. 52nd IEEE Int. Midwest Symp. on Circuits and Systems, p.29-32.

[7]Ge, G., Zhang, C., Hoogzaad, G., Makinwa, K., 2010. A Single-Trim CMOS Bandgap Reference with a 3σ Inaccuracy of ±0.15% from −40 °C to 125 °C. IEEE Int. Solid-State Circuits Conf., p.78-79.

[8]Gray, P.R., Hurst, P.J., Lewis, S.H., Meyer, R.G., 2003. Analysis and Design of Analog Integrated Circuits (4th Ed.). Higher Education Press, Beijing, China, p.317-320.

[9]Ivanov, V., Spady, D., 2005. Zero Voltage Class AB Minimal Delay Output Stage and Method. US Patent 0030097.

[10]Ka, N.L., Mok, P.K.T., Chi, Y.L., 2003. A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference. IEEE J. Sol.-State Circ., 38(3):561-564.

[11]Malcovati, P., Maloberti, F., Fiocchi, C., 2001. Curvature-compensated BiCMOS bandgap with 1-V supply voltage. IEEE J. Sol.-State Circ., 36(7):1076-1081.

[12]Ruzza, S., Dallago, E., Venchi, G., Morini, S., 2008. An Offset Compensation Technique for Bandgap Voltage Reference in CMOS Technology. IEEE Int. Symp. on Circuits and System, p.2226-2229.

[13]Sanborn, K., Ma, D.S., Ivanov, V., 2007. A sub-1-V low-noise bandgap voltage reference. IEEE J. Sol.-State Circ., 42(11):2466-2481.

[14]Spady, D., Ivanov, V., 2005. A CMOS Bandgap Voltage Reference with Absolute Value and Temperature Drift Trims. IEEE Int. Symp. on Circuits and Systems, p.3853-3856.

[15]Spilka, R., Hirth, M., Hilber, G., Ostermann, T., 2007. On-chip Digitally Trimmable Voltage Reference. Norchip Conf., p.1-4.

[16]Ueno, K., Hirose, T., Asai, T., Amemiya, Y., 2009. A 300 nW, 15 ppm/°C, 20 ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs. IEEE J. Sol.-State Circ., 44(7):2047-2053.

[17]Vishal, G., 2007. An Accurate Trimless High PSRR Low-Voltage CMOS Bandgap Reference IC. PhD Thesis, Georgia Institute of Technology, Atlanta, USA.

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