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CLC number: TN432

On-line Access: 2011-08-03

Received: 2010-12-22

Revision Accepted: 2011-03-18

Crosschecked: 2011-07-04

Cited: 1

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Citations:  Bibtex RefMan EndNote GB/T7714

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Journal of Zhejiang University SCIENCE C 2011 Vol.12 No.8 P.698-706


A low drift curvature-compensated bandgap reference with trimming resistive circuit

Author(s):  Zhi-hua Ning, Le-nian He

Affiliation(s):  Institute of Very Large Scale Integrated Circuits, Zhejiang University, Hangzhou 310027, China

Corresponding email(s):   ningzh@vlsi.zju.edu.cn

Key Words:  Voltage reference, Bandgap, Temperature compensation, Low drift, Resistive trimming

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Zhi-hua Ning, Le-nian He. A low drift curvature-compensated bandgap reference with trimming resistive circuit[J]. Journal of Zhejiang University Science C, 2011, 12(8): 698-706.

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A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×106/°C over the temperature range of −40–125 °C after trimming. The power supply rejection (PSR) was −100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.

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