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Abstract: We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO₂) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO₂ (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO₂ active layer. Experimental results show that the ZrO₂ active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO₂ QDs. The conductive mechanism of the Ag/ZrO₂/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

氧化锆量子点用于非易失性电阻式随机存取存储器

[1]Chua L, 2011. Resistance switching memories are memristors. Appl Phys A, 102(4):765-783.

[2]Craig J, 2018. Cybersecurity research—essential to a successful digital future. Engineering, 4(1):9-10.

[3]Emelyanov AV, Nikiruy KE, Demin VA, et al., 2019. Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications. Microelectron Eng, 215: 110988.

[4]Han PD, Sun B, Li J, et al., 2017. Ag filament induced non-volatile resistive switching memory behaviour in hexagonal MoSe₂ nanosheets. J Coll Interf Sci, 505:148-153.

[5]Han WB, Chen XG, Li SF, et al., 2018. A novel non-volatile memory storage system for I/O-intensive applications. Front Inform Technol Electron Eng, 19(10):1291-1302.

[6]He XL, Tang RG, Pu Y, et al., 2019a. High-gravity-hydrolysis approach to transparent nanozirconia/silicone encapsulation materials of light emitting diodes devices for healthy lighting. Nano Energy, 62:1-10.

[7]He XL, Wang Z, Wang D, et al., 2019b. Sub-kilogram-scale synthesis of highly dispersible zirconia nanoparticles for hybrid optical resins. Appl Surf Sci, 491:505-516.

[8]Jiang H, Belkin D, Savel′ev SE, et al., 2017. A novel true random number generator based on a stochastic diffusive memristor. Nat Commun, 8(1):882.

[9]Kadhim MS, Yang F, Sun B, et al., 2018. A resistive switching memory device with a negative differential resistance at room temperature. Appl Phys Lett, 113(5):053502.

[10]Li XM, Tao L, Chen ZF, et al., 2017. Graphene and related two-dimensional materials: structure-property relationships for electronics and optoelectronics. Appl Phys Rev, 4(2):021306.

[11]Liang L, Li K, Xiao C, et al., 2015. Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device. J Am Chem Soc, 137(8): 3102-3108.

[12]Liu X, Lu YT, Yu J, et al., 2017. ONFS: a hierarchical hybrid file system based on memory, SSD, and HDD for high performance computers. Front Inform Technol Electron Eng, 18(12):1940-1971.

[13]Lyu MJ, Liu YW, Zhi YD, et al., 2015. Electric-field-driven dual vacancies evolution in ultrathin nanosheets realizing reversible semiconductor to half-metal transition. J Am Chem Soc, 137(47):15043-15048.

[14]Pan F, Gao S, Chen C, et al., 2014. Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater Sci Eng R Rep, 83:1-59.

[15]Panda D, Tseng TY, 2013. Growth, dielectric properties, and memory device applications of ZrO₂ thin films. Thin Sol Film, 531:1-20.

[16]Siddiqui GU, Rehman MM, Choi KH, 2017. Resistive switching phenomena induced by the heterostructure composite of ZnSnO₃ nanocubes interspersed ZnO nanowires. J Mater Chem C, 5(22):5528-5537.

[17]Sleiman A, Mabrook MF, Nejm RR, et al., 2012. Organic bistable devices utilizing carbon nanotubes embedded in poly (methyl methacrylate). J Appl Phys, 112(2):024509.

[18]Strukov DB, Snider GS, Stewart DR, et al., 2008. The missing memristor found. Nature, 453(7191):80-83.

[19]Sun B, Li HW, Wei LJ, et al., 2014. Hydrothermal synthesis and resistive switching behaviour of WO₃/CoWO₄ core-shell nanowires. Cryst Eng Comm, 16(42):9891-9895.

[20]Sun B, Zhu SH, Mao SS, et al., 2018a. From dead leaves to sustainable organic resistive switching memory. J Coll Interf Sci, 513:774-778.

[21]Sun B, Zhang XJ, Zhou GD, et al., 2018b. A flexible non-volatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate. J Coll Interf Sci, 520:19-24.

[22]Vescio G, Martín G, Crespo-Yepes A, et al., 2019. Low-power, high-performance, non-volatile inkjet-printed HfO₂-based resistive random access memory: from device to nanoscale characterization. ACS Appl Mater Interf, 11(26):23659-23666.

[23]Vishwanath SK, Kim J, 2016. Resistive switching characteristics of all-solution-based Ag/TiO₂/Mo-doped In₂O₃ devices for non-volatile memory applications. J Mater Chem C, 4(46):10967-10972.

[24]Wan T, Qu B, Du HW, et al., 2018. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices. J Coll Interf Sci, 512:767-774.

[25]Wang SY, Tsai CH, Lee DY, et al., 2011. Improved resistive switching properties of Ti/ZrO₂/Pt memory devices for RRAM application. Microelectron Eng, 88(7):1628-1632.

[26]Wang ZR, Li C, Song WH, et al., 2019. Reinforcement learning with analogue memristor arrays. Nat Electron, 2(3):115-124.

[27]Wu Y, Wei Y, Huang Y, et al., 2017. Capping CsPbBr₃ with ZnO to improve performance and stability of perovskite memristors. Nano Res, 10(5):1584-1594.

[28]Xia Y, Zhang C, Wang JX, et al., 2018. Synthesis of transparent aqueous ZrO₂ nanodispersion with a controllable crystalline phase without modification for a high-refractive-index nanocomposite film. Langmuir, 34(23): 6806-6813.

[29]Yan XB, Li YC, Zhao JH, et al., 2016. Roles of grain boundary and oxygen vacancies in Ba_0.6Sr_0.4TiO₃ films for resistive switching device application. Appl Phys Lett, 108(3): 033108.

[30]Yu YM, Yang F, Mao SS, et al., 2018. Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO₂ thin films device. Chem Phys Lett, 706:477-482.

[31]Zhang YY, Yang T, Yan XB, et al., 2017. A metal/ Ba_0.6Sr_0.4TiO₃/SiO₂/Si single film device for charge trapping memory towards a large memory window. Appl Phys Lett, 110(22):223501.

[32]Zhao H, Dong ZP, Tian H, et al., 2017. Atomically thin femtojoule memristive device. Adv Mater, 29(47): 1703232.

[33]Zhou GD, Sun B, Zhou AK, et al., 2017. A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells. Curr Appl Phys, 17(2):235-239.

[34]Zhou J, Li PG, Zhou YH, et al., 2018. Toward new-generation intelligent manufacturing. Engineering, 4(1):11-20.