CLC number: O472+.5
On-line Access: 2011-07-04
Received: 2010-12-31
Revision Accepted: 2011-02-27
Crosschecked: 2011-06-21
Cited: 3
Clicked: 5817
Jie Jiang, Xue-tao Wang, Li-ping Zhu, Li-qiang Zhang, Zhi-guo Yang, Zhi-zhen Ye. Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition[J]. Journal of Zhejiang University Science A, 2011, 12(7): 561-566.
@article{title="Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition",
author="Jie Jiang, Xue-tao Wang, Li-ping Zhu, Li-qiang Zhang, Zhi-guo Yang, Zhi-zhen Ye",
journal="Journal of Zhejiang University Science A",
volume="12",
number="7",
pages="561-566",
year="2011",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.A1000525"
}
%0 Journal Article
%T Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition
%A Jie Jiang
%A Xue-tao Wang
%A Li-ping Zhu
%A Li-qiang Zhang
%A Zhi-guo Yang
%A Zhi-zhen Ye
%J Journal of Zhejiang University SCIENCE A
%V 12
%N 7
%P 561-566
%@ 1673-565X
%D 2011
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.A1000525
TY - JOUR
T1 - Electrical and magnetic properties of ZnNiO thin films deposited by pulse laser deposition
A1 - Jie Jiang
A1 - Xue-tao Wang
A1 - Li-ping Zhu
A1 - Li-qiang Zhang
A1 - Zhi-guo Yang
A1 - Zhi-zhen Ye
J0 - Journal of Zhejiang University Science A
VL - 12
IS - 7
SP - 561
EP - 566
%@ 1673-565X
Y1 - 2011
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.A1000525
Abstract: znNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.
[1]Burstein, E., 1954. Anomalous optical absorption limit in InSb. Physical Review, 93(3):632-633.
[2]Chen, M., Wang, X., Yu, Y.H., Pei, Z.L., Bai, X.D., Sun, C., Huang, R.F., Wen, L.S., 2000. X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films. Applied Surface Science, 158(1-2):134-140.
[3]Dorneles, L.S., Venkatesan, M., Gunning, R., Stamenov, P., Alaria, J., Rooney, M., Lunney, J.G., Coey, J.M.D., 2007. Magnetic and structural properties of Co-doped ZnO thin films. Journal of Magnetism and Magnetic Materials, 310(2):2087-2088.
[4]Fang, Z.Q., Claflin, B., Look, D.C., Kerr, L.L., Li, X.N., 2007. Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition. Journal of Applied Physics, 102(2):023714.
[5]Futsuhara, M., Yoshioka, K., Takai, O., 1998. Optical properties of zinc oxynitride thin films. Thin Solid Films, 317(1-2):322-325.
[6]Huang, J.Y., Ye, Z.Z., Chen, H.H., Zhao, B.H., Wang, L., 2002. Growth of N-doped p-type ZnO films using ammonia as dopant source gas. Journal of Material Science Letters, 22(4):249-251.
[7]Jayaram, V., Rani, B.S., 2001. Soft chemical routes to the synthesis of extended solid solutions of wurtzite ZnO-MO (M=Mg, Co, Ni). Materials Science Engineering A, 304-306:800-804.
[8]Kim, H.S., Lugo, F., Pearton, S.J., Norton, D.P., Wang, Y.L., Ren, F., 2008. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition. Applied Physics Letters, 92(11):112108.
[9]Li, Q.H., Zhu, D.L., Liu, W.J., Liu, Y., Ma, X.C., 2008. Optical properties of Al-doped ZnO thin films by ellipsometry. Applied Surface Science, 254(10):2922-2926.
[10]Li, L., Fang, L., Zhou, X.J., Liu, Z.Y., Zhao, L., Jiang, S., 2009. X-ray photoelectron spectroscopy study and thermoelectric properties of Al-doped ZnO thin films. Journal of Electron Spectroscopy and Related Phenomena, 173(1):7-11.
[11]Lin, S.S., Lu, J.G., Ye, Z.Z., He, H.P., Gu, X.Q., Chen, L.X., Huang, J.Y., Zhao, B.H., 2008. p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes. Solid State Communications, 148(1-2):25-28.
[12]Lin, S.S., He, H.P., Lu, Y.F., Ye, Z.Z., 2009. Mechanism of Na-doped p-type ZnO films: suppressing Na interstitials by codoping with H and Na of appropriate concentrations. Journal of Applied Physics, 106(9):093508.
[13]Liu, X.X., Lin, F.T., Sun, L.L., Cheng, W.J., Ma, X.M., Shi, W.Z., 2006. Doping concentration dependence of room-temperature ferromagnetism for Ni-doped ZnO thin films prepared by pulsed-laser deposition. Applied Physics Letters, 88(6):062508.
[14]Liu, E., Xiao, P., Chen, J. S., Lim, B. C., Li, L., 2008. Ni doped ZnO thin films for diluted magnetic semiconductor materials. Current Applied Physics, 8(3-4):408-411.
[15]Liu, X.J., Zhu, X.Y., Song, C., Zeng, F., Pan, F., 2009. Intrinsic and extrinsic origins of room temperature ferromagnetism in Ni-doped ZnO films. Journal of Physics D: Applied Physics, 42(3):035004.
[16]Look, D.C., 2001. Recent advances in ZnO materials and devices. Materials Science and Engineering B, 80(1-3):383-387.
[17]McCluskey, M.D., Jokela, S.J., 2009. Defects in ZnO. Journal of Applied Physics, 106(7):071101.
[18]Mitra, S., Singh, S., Bandyopadhyay, S.K., Singh, C.S., 2006. Effect of irrigation, N, and bio-fertilizers on yield and nutrient uptake by wheat. Tropical Agriculture, 83(1-4):87-94.
[19]Pan, F., Song, C., Liu, X.J., Yang, Y.C., Zeng, F., 2008. Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films. Materials Science Engineering: R: Reports, 62(1):1-35.
[20]Parra-Palomino, A., Perales-Perez, O., Singhal, R., Tomar, M., Hwang, J., Voyles, P.M., 2008. Structural, optical, and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals. Journal of Applied Physics, 103(7):07D121.
[21]Peng, X.P., Zang, H., Wang, Z.G., Xu, J.Z., Wang, Y.Y., 2008. Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering. Journal of Luminescence, 128(3):328-332.
[22]Sato, K., Katayama-Yoshida, H., 2001. Stabilization of ferromagnetic states by electron doping in Fe-, Co- or Ni-doped ZnO. Japanese Journal of Applied Physics, 40:L334-L336.
[23]Tang, Z.K., Wong, G.K.L., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H., Segawa, Y., 1998. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films. Applied Physics Letters, 72(25):3270.
[24]Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., 1979. Handbook of X-ray Photoelectron Spectroscopy. Perkin Elmer, Eden Prairie, MN, USA, p.81.
[25]Wakano, T., Fujimura, N., Morinaga, Y., Abe, N., Ashida, A., Ito, T., 2001. Magnetic and magneto-transport properties of ZnO:Ni films. Physica E: Low-Dimensional Systems and Nanostructures, 10(1-3):260-264.
[26]Wang, Q., Sun, Q., Rao, B.K., Jena, P., 2004. Magnetism and energetics of Mn-Doped ZnO (10-10) thin films. Physical Review B, 69(23):233310.
[27]Yamada, T., Miyake, A., Kishimoto, S., Makino, H., Yamamoto, N., Yamamoto, T., 2007. Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge. Applied Physics Letters, 91(5):051915.
[28]Yu, G.H., Zeng, L.R., Zhu, F.W., Chai, C.L., Lai, W.Y., 2001. Magnetic properties and X-ray photoelectron spectroscopy study of NiO/NiFe films prepared by magnetron sputtering. Journal of Applied Physics, 90(8):4039.
[29]Yu, W., Yang, L.H., Teng, X.Y., Zhang, J.C., Zhang, Z.C., Zhang, L., Fu, G.S., 2008. Influence of structure characteristics on room temperature ferromagnetism of Ni-doped ZnO thin films. Journal of Applied Physics, 103(9):093901.
[30]Zeng, Y.J., Ye, Z.Z., Lu, J.G., Xu, W.Z., Zhu, L.P., Zhao, B.H., Limpijumnong, S., 2006. Identification of acceptor states in Li-doped p-type ZnO thin films. Applied Physics Letters, 89(4):042106.
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