Full Text:   <1820>

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CLC number: TN386.1

On-line Access: 2020-01-13

Received: 2019-07-19

Revision Accepted: 2019-11-14

Crosschecked: 2019-12-12

Cited: 0

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Citations:  Bibtex RefMan EndNote GB/T7714


Xiang-lei He


Feng Yang


Dan Wang


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Frontiers of Information Technology & Electronic Engineering  2019 Vol.20 No.12 P.1698-1705


Zirconia quantum dots for a nonvolatile resistive random access memory device

Author(s):  Xiang-lei He, Rui-jie Tang, Feng Yang, Mayameen S. Kadhim, Jie-xin Wang, Yuan Pu, Dan Wang

Affiliation(s):  State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China; more

Corresponding email(s):   yf@swjtu.edu.cn, wangdan@mail.buct.edu.cn

Key Words:  Zirconia quantum dot, Resistive switching, Memory device, Spin coating

Xiang-lei He, Rui-jie Tang, Feng Yang, Mayameen S. Kadhim, Jie-xin Wang, Yuan Pu, Dan Wang. Zirconia quantum dots for a nonvolatile resistive random access memory device[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1698-1705.

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author="Xiang-lei He, Rui-jie Tang, Feng Yang, Mayameen S. Kadhim, Jie-xin Wang, Yuan Pu, Dan Wang",
journal="Frontiers of Information Technology & Electronic Engineering",
publisher="Zhejiang University Press & Springer",

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%T Zirconia quantum dots for a nonvolatile resistive random access memory device
%A Xiang-lei He
%A Rui-jie Tang
%A Feng Yang
%A Mayameen S. Kadhim
%A Jie-xin Wang
%A Yuan Pu
%A Dan Wang
%J Frontiers of Information Technology & Electronic Engineering
%V 20
%N 12
%P 1698-1705
%@ 2095-9184
%D 2019
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.1900363

T1 - Zirconia quantum dots for a nonvolatile resistive random access memory device
A1 - Xiang-lei He
A1 - Rui-jie Tang
A1 - Feng Yang
A1 - Mayameen S. Kadhim
A1 - Jie-xin Wang
A1 - Yuan Pu
A1 - Dan Wang
J0 - Frontiers of Information Technology & Electronic Engineering
VL - 20
IS - 12
SP - 1698
EP - 1705
%@ 2095-9184
Y1 - 2019
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.1900363

We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO2) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO2 (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO2 active layer. Experimental results show that the ZrO2 active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO2 QDs. The conductive mechanism of the Ag/ZrO2/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.


摘要:提出一种利用氧化锆量子点作为有源层的非易失性电阻式随机存取器。通过旋涂法制备Ag(上)/ZrO2(有源层)/Ti(下)典型的三明治结构存储器件。该优化器件具有较高高/低电阻差(约10Ω),良好循环性能(循环数大于100),较低转化电流(约1 μA)。通过原子力显微镜和扫描电子显微镜观察ZrO2有源层表面形貌和堆积状态。实验结果表明,ZrO2有源层紧密堆积,且由于ZrO2量子点分布均匀,ZrO2有源层粗糙度较低(Ra=4.49 nm)。分析了Ag/ZrO2/Ti器件导电机理,并研究银离子导电丝和氧空位对电阻开关记忆行为的影响。该研究为忆阻器材料开发提供了一种简单方案。


Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article


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