CLC number: TN432
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2012-10-22
Cited: 0
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Yi-die Ye, Le-nian He, Ya-dan Shen. A low drift current reference based on PMOS temperature correction technology[J]. Journal of Zhejiang University Science C, 2012, 13(12): 937-943.
@article{title="A low drift current reference based on PMOS temperature correction technology",
author="Yi-die Ye, Le-nian He, Ya-dan Shen",
journal="Journal of Zhejiang University Science C",
volume="13",
number="12",
pages="937-943",
year="2012",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.C1200112"
}
%0 Journal Article
%T A low drift current reference based on PMOS temperature correction technology
%A Yi-die Ye
%A Le-nian He
%A Ya-dan Shen
%J Journal of Zhejiang University SCIENCE C
%V 13
%N 12
%P 937-943
%@ 1869-1951
%D 2012
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1200112
TY - JOUR
T1 - A low drift current reference based on PMOS temperature correction technology
A1 - Yi-die Ye
A1 - Le-nian He
A1 - Ya-dan Shen
J0 - Journal of Zhejiang University Science C
VL - 13
IS - 12
SP - 937
EP - 943
%@ 1869-1951
Y1 - 2012
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1200112
Abstract: A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10−6/°C over the temperature range of −40–120 °C under the typical condition.
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