JZUS - Journal of Zhejiang University SCIENCE

Frontiers of Information Technology & Electronic Engineering 2019 Vol.20 No.12 P.1698-1705

http://doi.org/10.1631/FITEE.1900363

Zirconia quantum dots for a nonvolatile resistive random access memory device

Author(s): Xiang-lei He, Rui-jie Tang, Feng Yang, Mayameen S. Kadhim, Jie-xin Wang, Yuan Pu, Dan Wang
Affiliation(s): State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China; more
Corresponding email(s): yf@swjtu.edu.cn, wangdan@mail.buct.edu.cn
Key Words: Zirconia quantum dot, Resistive switching, Memory device, Spin coating

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Abstract: We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO₂) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO₂ (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO₂ active layer. Experimental results show that the ZrO₂ active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO₂ QDs. The conductive mechanism of the Ag/ZrO₂/Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

氧化锆量子点用于非易失性电阻式随机存取存储器

摘要：提出一种利用氧化锆量子点作为有源层的非易失性电阻式随机存取器。通过旋涂法制备Ag(上)/ZrO₂(有源层)/Ti(下)典型的三明治结构存储器件。该优化器件具有较高高/低电阻差（约10Ω），良好循环性能（循环数大于100），较低转化电流（约1 μA）。通过原子力显微镜和扫描电子显微镜观察ZrO₂有源层表面形貌和堆积状态。实验结果表明，ZrO₂有源层紧密堆积，且由于ZrO₂量子点分布均匀，ZrO₂有源层粗糙度较低（Ra=4.49 nm）。分析了Ag/ZrO₂/Ti器件导电机理，并研究银离子导电丝和氧空位对电阻开关记忆行为的影响。该研究为忆阻器材料开发提供了一种简单方案。

关键词：氧化锆量子点；电阻开关；存储器件；旋涂法

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