Full Text:
<3745>
CLC number: TN432
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2012-10-22
Cited: 0
Clicked: 8493
A low drift current reference based on PMOS temperature correction technology
| |||||||||||||
Yi-die Ye, Le-nian He, Ya-dan Shen. A low drift current reference based on PMOS temperature correction technology[J]. Journal of Zhejiang University Science C, 2012, 13(12): 937-943.
@article{title="A low drift current reference based on PMOS temperature correction technology",
author="Yi-die Ye, Le-nian He, Ya-dan Shen",
journal="Journal of Zhejiang University Science C",
volume="13",
number="12",
pages="937-943",
year="2012",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.C1200112"
}
%0 Journal Article
%T A low drift current reference based on PMOS temperature correction technology
%A Yi-die Ye
%A Le-nian He
%A Ya-dan Shen
%J Journal of Zhejiang University SCIENCE C
%V 13
%N 12
%P 937-943
%@ 1869-1951
%D 2012
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1200112
TY - JOUR
T1 - A low drift current reference based on PMOS temperature correction technology
A1 - Yi-die Ye
A1 - Le-nian He
A1 - Ya-dan Shen
J0 - Journal of Zhejiang University Science C
VL - 13
IS - 12
SP - 937
EP - 943
%@ 1869-1951
Y1 - 2012
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1200112
Abstract: A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10−6/°C over the temperature range of −40–120 °C under the typical condition.
[1]Babu, V.S., Haseena, P.S., Baiju, M.R., 2010. A Floating Gate MOSFET Based Current Reference with Subtraction Technique. IEEE Computer Society Annual Symp. on VLSI, p.206-209.
[2]Behzad, R., 2005. Design of Analog CMOS Integrated Circuits. Tsinghua University Press, Beijing, China, p.313-314 (in Chinese).
[3]Chun, H., Lehmann, T., 2010. CMOS Current Reference Generator Using Integrated Resistors. Int. Conf. on Electronics and Information Engineering, p.290-294.
[4]Khan, Q.A., Wadhwa, S.K., Misri, K., 2003. A Low Voltage Switched-Capacitor Current Reference Circuit with Low Dependence on Process, Voltage and Temperature. Proc. 16th Int. Conf. on VLSI Design, p.504-506.
[5]Osaki, Y., Hirose, T., Kuroki, N., Numa, M., 2010. Nano-Ampere CMOS Current Reference with Little Temperature Dependence Using Small Offset Voltage. 53rd IEEE Int. Midwest Symp. on Circuits and Systems, p.668-671.
[6]Serrano, G., Hasler, P., 2008. A precision low-TC wide-range CMOS current reference. IEEE J. Sol.-State Circ., 43(2):558-565.
[7]Yang, B.D., Shin, Y.K., Lee, J.S., Lee, Y.K., Ryu, K.C., 2009. An Accurate Current Reference Using Temperature and Process Compensation Current Mirror. IEEE Asian Solid-State Circuits Conf., p.241-244.
[8]Yang, W.B., Huang, Z.Y., Cheng, C.T., Lo, Y.L., 2011. Temperature Insensitive Current Reference for the 6.27 MHz Oscillator. 13th Int. Symp. on Integrated Circuits, p.559-562.
[9]Yoo, C., Park, J., 2007. CMOS current reference with supply and temperature compensation. Electron. Lett., 43(25):1422-1424.
Open peer comments: Debate/Discuss/Question/Opinion
<1>