Full Text:   <37>

CLC number: 

On-line Access: 2022-09-10

Received: 2022-03-04

Revision Accepted: 2022-08-21

Crosschecked: 0000-00-00

Cited: 0

Clicked: 97

Citations:  Bibtex RefMan EndNote GB/T7714

-   Go to

Article info.
Open peer comments

Journal of Zhejiang University SCIENCE C 1998 Vol.-1 No.-1 P.

http://doi.org/10.1631/FITEE.2200082


High linearity U-band power amplifier design with novel linearity analysis method: from intermodulation point


Author(s):  Jie CUI, Peipei LI, Weixing SHENG

Affiliation(s):  School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Corresponding email(s):   cuijie@njust.edu.cn

Key Words:  CMOS SOI, Linearity analysis, Mm-wave, Power amplifiers


Jie CUI, Peipei LI, Weixing SHENG. High linearity U-band power amplifier design with novel linearity analysis method: from intermodulation point[J]. Frontiers of Information Technology & Electronic Engineering, 1998, -1(-1): .

@article{title="High linearity U-band power amplifier design with novel linearity analysis method: from intermodulation point",
author="Jie CUI, Peipei LI, Weixing SHENG",
journal="Frontiers of Information Technology & Electronic Engineering",
volume="-1",
number="-1",
pages="",
year="1998",
publisher="Zhejiang University Press & Springer",
doi="10.1631/FITEE.2200082"
}

%0 Journal Article
%T High linearity U-band power amplifier design with novel linearity analysis method: from intermodulation point
%A Jie CUI
%A Peipei LI
%A Weixing SHENG
%J Journal of Zhejiang University SCIENCE C
%V -1
%N -1
%P
%@ 2095-9184
%D 1998
%I Zhejiang University Press & Springer
%DOI 10.1631/FITEE.2200082

TY - JOUR
T1 - High linearity U-band power amplifier design with novel linearity analysis method: from intermodulation point
A1 - Jie CUI
A1 - Peipei LI
A1 - Weixing SHENG
J0 - Journal of Zhejiang University Science C
VL - -1
IS - -1
SP -
EP -
%@ 2095-9184
Y1 - 1998
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/FITEE.2200082


Abstract: 
A power amplifier’s linearity determines the emission signal’s quality and contradicts the efficiency of the system. Nonlinear distortion can result in system bit error, out-of-band radiation and interference with other channels, which severely influence communication system quality and reliability. Starting from the third-order intermodulation point of the millimeter wave power amplifiers, the circuit’s nonlinearity is compensated. The analysis, design and implementation of linear class AB mm-wave power amplifiers (PAs) based on Globalfoundries 45 nm CMOS SOI technology are presented. Three single-ended and differential stacked power amplifiers based on cascode cells and triple cascode cells operating in U-band frequencies have been implemented. According to nonlinear analysis and on-wafer measurements, designs based on triple cascode cells outperform those based on cascode cells. Using single-ended measurements, the differential PA achieves a measured peak power-added efficiency (PAE) of 47% and a saturated output power (Psat) of 25.2 dBm at 44 GHz. The amplifier achieves a Psat higher than 23 dBm and a maximum PAE higher than 25% in the measured bandwidth from 44 GHz to 50 GHz.

Darkslateblue:Affiliate; Royal Blue:Author; Turquoise:Article

Open peer comments: Debate/Discuss/Question/Opinion

<1>

Please provide your name, email address and a comment





Journal of Zhejiang University-SCIENCE, 38 Zheda Road, Hangzhou 310027, China
Tel: +86-571-87952783; E-mail: cjzhang@zju.edu.cn
Copyright © 2000 - 2022 Journal of Zhejiang University-SCIENCE