CLC number: TN4
On-line Access: 2024-08-27
Received: 2023-10-17
Revision Accepted: 2024-05-08
Crosschecked: 2014-11-09
Cited: 1
Clicked: 7460
Citations: Bibtex RefMan EndNote GB/T7714
Fa-en Liu, Zhi-gong Wang, Zhi-qun Li, Qin Li, Lu Tang, Ge-liang Yang. A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology[J]. Journal of Zhejiang University Science C, 2014, 15(12): 1183-1189.
@article{title="A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology",
author="Fa-en Liu, Zhi-gong Wang, Zhi-qun Li, Qin Li, Lu Tang, Ge-liang Yang",
journal="Journal of Zhejiang University Science C",
volume="15",
number="12",
pages="1183-1189",
year="2014",
publisher="Zhejiang University Press & Springer",
doi="10.1631/jzus.C1400080"
}
%0 Journal Article
%T A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology
%A Fa-en Liu
%A Zhi-gong Wang
%A Zhi-qun Li
%A Qin Li
%A Lu Tang
%A Ge-liang Yang
%J Journal of Zhejiang University SCIENCE C
%V 15
%N 12
%P 1183-1189
%@ 1869-1951
%D 2014
%I Zhejiang University Press & Springer
%DOI 10.1631/jzus.C1400080
TY - JOUR
T1 - A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology
A1 - Fa-en Liu
A1 - Zhi-gong Wang
A1 - Zhi-qun Li
A1 - Qin Li
A1 - Lu Tang
A1 - Ge-liang Yang
J0 - Journal of Zhejiang University Science C
VL - 15
IS - 12
SP - 1183
EP - 1189
%@ 1869-1951
Y1 - 2014
PB - Zhejiang University Press & Springer
ER -
DOI - 10.1631/jzus.C1400080
Abstract: We present a 31–45.5 GHz injection-locked frequency divider (ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 dBm. The power consumption is 2.88 mW under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.
[1]Allen, P., Holberg, D.R., 2002. CMOS Analog Circuit Design (2nd Ed.). Holt Rinehart and Winston, New York, p.30-36.
[2]Cheema, H.M., Mahmoudi, R., van Roermund, A., 2010. A 30 to 44 GHz divide-by-2, quadrature, direct injection locked frequency divider for sliding-IF 60 GHz transceivers. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, p.57-60.
[3]Chen, Y.T., Li, M.W., Huang, T.H., et al., 2010. A V-band CMOS direct injection-locked frequency divider using forward body bias technology. IEEE Microw. Wirel. Compon. Lett., 20(7):396-398.
[4]Katz, A., Degani, O., Socher, E., 2011. Modeling and design of a low-power injection-locked frequency divider in 90nm CMOS for 60GHz applications. IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, p.61-64.
[5]Lee, J.Y., Lee, S.H., Kim, H., et al., 2008. A 28.5–32-GHz fast settling multichannel PLL synthesizer for 60-GHz WPAN radio. IEEE Trans. Microw. Theory Techn., 56(5):1234-1246.
[6]Luo, T.N., Chen, Y.J., 2008. A 0.8 mW 55 GHz dual-injection locked CMOS frequency divider. IEEE Trans. Microw. Theory Techn., 56(3):620-625.
[7]Razavi, B., 2004. A study of injection locking and pulling in oscillators. IEEE J. Solid-State Circ., 39(9):1415-1424.
[8]Wang, H.R., Zhang, L., Yang, D.X., 2011. A 60GHz wideband injection-locked frequency divider with adaptive-phase-enhancing technique. IEEE Radio Frequency Integrated Circuits Symp., p.1-4.
[9]Weng, P.S., Lu, L.H., 2012. A 30 GHz CMOS frequency synthesizer for V-band applications. IEEE Microw. Wirel. Compon. Lett., 22(8):433-435.
[10]Yu, C.H., Tsai, J.H., Huang, T.W., 2013. A low-power Ka-band frequency synthesizer with transformer feedback VCO embedded in 90-nm COMS technology. IEEE Int. Wireless Symp., p.1-4.
Open peer comments: Debate/Discuss/Question/Opinion
<1>